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1دورية أكاديمية
المصدر: Microbiology Research, Vol 15, Iss 1, Pp 354-370 (2024)
مصطلحات موضوعية: Clostridioides difficile, CDI, cdtR, typing, real-time PCR, molecular beacon, Microbiology, QR1-502
وصف الملف: electronic resource
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2دورية أكاديمية
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المؤلفون: Julian Anaya, Elisha J M Mercado, Martin Kuball
المصدر: Mercado, E J M, Anaya, J & Kuball, M H H 2021, ' Impact of Polymer Residue Level on the In-Plane Thermal Conductivity of Suspended Large-Area Graphene Sheets ', ACS Applied Materials and Interfaces, vol. 13, no. 15, pp. 17910-17919 . https://doi.org/10.1021/acsami.1c00365
مصطلحات موضوعية: Materials science, Fabrication, 02 engineering and technology, Chemical vapor deposition, 010402 general chemistry, 01 natural sciences, law.invention, symbols.namesake, Thermal conductivity, law, Thermal, Thermoelectric effect, CDTR, General Materials Science, Raman, chemistry.chemical_classification, Graphene, Thermoelectric, Nanopatterning, Polymer, 021001 nanoscience & nanotechnology, PMMA, 0104 chemical sciences, chemistry, Chemical engineering, symbols, Thermal management, 0210 nano-technology, Raman spectroscopy
وصف الملف: application/pdf
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المؤلفون: Martin Kuball, Elisha J M Mercado, Chao Yuan, Yan Zhou, James H. Edgar, Jiahan Li
المصدر: Mercado, E J M, Yuan, C, Zhou, Y, Li, J, Edgar, J H & Kuball, M H H 2020, ' Isotopically Enhanced Thermal Conductivity in Few-Layer Hexagonal Boron Nitride : Implications for Thermal Management ', ACS Applied Nano Materials, vol. 3, no. 12 . https://doi.org/10.1021/acsanm.0c02647
مصطلحات موضوعية: interfacial thermal, Materials science, Hexagonal boron nitride, Thermal management of electronic devices and systems, isotope engineering, symbols.namesake, Thermal conductivity, symbols, Interfacial thermal resistance, CDTR, thermal conductivity, General Materials Science, hexagonal boron nitride, two-dimensional materials, Composite material, Raman spectroscopy, Raman, Layer (electronics)
وصف الملف: application/pdf
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المؤلفون: James W Pomeroy, Bahar Oner, Martin Kuball
المصدر: Oner, B, Pomeroy, J W & Kuball, M H H 2020, ' Submicron Resolution Hyperspectral Quantum Rod Thermal Imaging of Microelectronic Devices ', ACS Applied Electronic Materials, pp. 93-102 . https://doi.org/10.1021/acsaelm.9b00575
مصطلحات موضوعية: Materials science, business.industry, Resolution (electron density), Hyperspectral imaging, Temperature measurement, Electronic, Optical and Magnetic Materials, Thermography, Materials Chemistry, Electrochemistry, Miniaturization, Microelectronics, Optoelectronics, CDTR, business, Nanoscopic scale, Microscale chemistry
وصف الملف: application/pdf
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المؤلفون: Hui Cai, Wanqi Jie, Bin Chen, Martin Kuball, Qinghua Zhao, Yan Zhou, Tao Wang, Elisha J M Mercado, Sefaattin Tongay, Yong Xie
المصدر: ACS Omega, Vol 4, Iss 19, Pp 18002-18010 (2019)
ACS Omega
Mercado, E J M, Zhou, Y, Xie, Y, Zhao, Q, Cai, H, Chen, B, Jie, W, Tongay, S, Wang, T & Kuball, M H H 2019, ' Passivation of Layered Gallium Telluride by Double Encapsulation with Graphene ', ACS Omega . https://doi.org/10.1021/acsomega.9b01752
ACS omega, vol 4, iss 19مصطلحات موضوعية: Materials science, Passivation, General Chemical Engineering, chemistry.chemical_element, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, Optical switch, Article, law.invention, chemistry.chemical_compound, symbols.namesake, law, Telluride, CDTR, Gallium, QD1-999, business.industry, Graphene, Materials Engineering, General Chemistry, Chemical Engineering, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Chemistry, Semiconductor, chemistry, symbols, Optoelectronics, van der Waals force, 0210 nano-technology, business, Raman spectroscopy
وصف الملف: application/pdf
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المؤلفون: Yuke Cao, James W Pomeroy, Feiyuan Yang, Michael J. Uren, Martin Kuball
المصدر: Cao, Y, Pomeroy, J W, Uren, M J, Yang, F & Kuball, M H H 2021, ' Electric field mapping of wide-bandgap semiconductor devices at a submicrometre resolution ', Nature Electronics, vol. 4, no. 7, pp. 478-485 . https://doi.org/10.1038/s41928-021-00599-5
مصطلحات موضوعية: Materials science, Dopant, business.industry, Fermi level, Transistor, Wide-bandgap semiconductor, Gallium nitride, Semiconductor device, Electronic, Optical and Magnetic Materials, law.invention, symbols.namesake, chemistry.chemical_compound, chemistry, law, Electric field, symbols, Optoelectronics, CDTR, Electrical and Electronic Engineering, business, Instrumentation, Leakage (electronics)
وصف الملف: application/pdf
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc393d43c2c13d94e78670cdd630f0c8
https://research-information.bris.ac.uk/en/publications/8c3be4a8-098c-4d7e-b633-04eb1cc22882 -
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المؤلفون: Nigel P. Minton, Sarah A. Kuehne, Terry W. Bilverstone
المصدر: Anaerobe
مصطلحات موضوعية: Bacterial Toxins, Mutant, Virulence, Biology, Microbiology, Article, CDT, Two-component system, 03 medical and health sciences, CdtR, Phosphorylation, Gene, Sequence Deletion, 030304 developmental biology, Genetics, 0303 health sciences, Pore-forming toxin, Clostridioides difficile, 030306 microbiology, Nucleic acid sequence, Promoter, Gene Expression Regulation, Bacterial, Clostridium difficile, C. difficile, Response regulator, Infectious Diseases, Clostridium Infections, Mutant Proteins, Protein Processing, Post-Translational, Binary toxin, Signal Transduction, Transcription Factors
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المؤلفون: Tetsu Kachi, Michael J. Uren, Martin Kuball, Ben Rackauskas
المصدر: Rackauskas, B, Uren, M, Kachi, T & Kuball, M 2019, ' Reliability and lifetime estimations of GaN-on-GaN vertical pn diodes ', Microelectronics Reliability, vol. 95, pp. 48-51 . https://doi.org/10.1016/j.microrel.2019.02.013
مصطلحات موضوعية: Work (thermodynamics), Mean time between failures, Materials science, Failure mechanism, 02 engineering and technology, 01 natural sciences, Stress (mechanics), Reliability (semiconductor), MTTF, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, CDTR, Electrical and Electronic Engineering, Safety, Risk, Reliability and Quality, Diode, 010302 applied physics, GaN-on-GaN, business.industry, Surface breakdown, 020208 electrical & electronic engineering, Vertical pn diode, Reliability, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Optoelectronics, business, Material properties, Lifetime
وصف الملف: application/pdf
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المؤلفون: Benoit Lambert, Peter A. Butler, Martin Kuball, Michael J. Uren
المصدر: Butler, P A, Uren, M J, Lambert, B & Kuball, M 2018, ' Neutron Irradiation Impact on AlGaN/GaN HEMT Switching Transients ', IEEE Transactions on Nuclear Science, vol. 65, no. 12, 8529209, pp. 2862-2869 . https://doi.org/10.1109/TNS.2018.2880287
مصطلحات موضوعية: Nuclear and High Energy Physics, III-V semiconductors, switching transients, Materials science, Thermonuclear fusion, gate-lag, Gallium nitride, High-electron-mobility transistor, Radiation, 01 natural sciences, chemistry.chemical_compound, 0103 physical sciences, CDTR, Irradiation, Electrical and Electronic Engineering, 010302 applied physics, 010308 nuclear & particles physics, displacement damage (DD), Charge density, 14-MeV neutron, Charge (physics), Coupling (probability), Nuclear Energy and Engineering, chemistry, high electron mobility transistor (HEMT), gallium nitride (GaN), Atomic physics
وصف الملف: application/pdf