يعرض 1 - 7 نتائج من 7 نتيجة بحث عن '"deBoer, Skylar"', وقت الاستعلام: 0.98s تنقيح النتائج
  1. 1
    مؤتمر
    A Novel 6.5 kV 4H-SiC MOSFET with a One-Channel Layout

    المؤلفون: Lynch, Justin, Mancini, Steve, deBoer, Skylar, Jang, Seung-Yup, Morgan, Adam J., Lee, Bongmook, Sung, Woongje

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :124-127 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  2. 2
    مؤتمر
    Improved Blocking and Switching Characteristics of Split-Gate 1.2kV 4H-SiC MOSFET with a Deep P-well

    المؤلفون: Kim, Dongyoung, DeBoer, Skylar, Jang, Seung Yup, Morgan, Adam J., Sung, Woongje

    المصدر: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2023 35th International Symposium on. :350-353 May, 2023

    Relation: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  3. 3
    مؤتمر
    Static, Dynamic, and Short-circuit Characteristics of Split-Gate 1.2 kV 4H-SiC MOSFETs

    المؤلفون: Kim, Dongyoung, DeBoer, Skylar, Mancini, Stephen A, Isukapati, Sundar Babu, Lynch, Justin, Yun, Nick, Morgan, Adam J, Jang, Seung Yup, Sung, Woongje

    المصدر: 2023 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2023 IEEE International. :1-4 Mar, 2023

    Relation: 2023 IEEE International Reliability Physics Symposium (IRPS)

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  4. 4
    مؤتمر
    A Comparison of Short-Circuit Failure Mechanisms of 1.2 kV 4H-SiC MOSFETs and JBSFETs

    المؤلفون: Kim, Dongyoung, DeBoer, Skylar, Jang, Seung Yup, Morgan, Adam J., Sung, Woongje

    المصدر: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Wide Bandgap Power Devices & Applications (WiPDA), 2022 IEEE 9th Workshop on. :54-57 Nov, 2022

    Relation: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)

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  5. 5
    مؤتمر
    A Static, Switching, Short-circuit Characteristics of 1.2 kV 4H-SiC MOSFETs: Comparison between Linear and (Bridged) Hexagonal Topology

    المؤلفون: Kim, Dongyoung, Yun, Nick, deBoer, Skylar, Morgan, Adam J, Jang, Seung Yup, Sung, Woongje, Fan, Junchong, Yu, Susanna, Kang, Minseok, Agarwal, Anant K.

    المصدر: 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Wide Bandgap Power Devices and Applications (WiPDA), 2021 IEEE 8th Workshop on. :9-13 Nov, 2021

    Relation: 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)

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  6. 6
    مؤتمر
    Critical Design Considerations for Static and Dynamic Performances on 6.5 kV 4H-SiC MOSFETs Fabricated in a 6-inch SiC Foundry

    المؤلفون: Yun, Nick, Lynch, Justin, DeBoer, Skylar, Morgan, Adam J, Sung, Woongje, Xing, Diang, Kang, Minseok, Agarwal, Anant, Veliadis, Victor, Amarasinghe, Voshadhi, Ransom, John

    المصدر: 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Wide Bandgap Power Devices and Applications (WiPDA), 2021 IEEE 8th Workshop on. :361-365 Nov, 2021

    Relation: 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)

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  7. 7
    دورية أكاديمية

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