المؤلفون: Amirsardari, Zahra^Aff1, Vahidshad, Yaser, Amirifar, Mohamad Ali, Khodabakhshi, Amir Hossein, Dourani, Akram, Ghadiri Massoom, Nooredin

المصدر: Journal of Failure Analysis and Prevention. 21(4):1289-1296

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المؤلفون: Imanbaew, D.^Aff6, Nosenko, Y.^Aff6, Chevalier, K.^Aff7, Rupp, F.^Aff7, Kerner, C.^Aff6, Breher, F.^Aff8, Thiel, W. R.^Aff6, Diller, R.^Aff7, Riehn, C.^Aff6

المساهمون: Yamanouchi, Kaoru, editor^Aff1, Cundiff, Steven, editor^Aff2, de Vivie-Riedle, Regina, editor^Aff3, Kuwata-Gonokami, Makoto, editor^Aff4, DiMauro, Louis, editor^Aff5

المصدر: Ultrafast Phenomena XIX : Proceedings of the 19th International Conference, Okinawa Convention Center, Okinawa, Japan, July 7-11, 2014. 162:378-381

المساهمون: Nimlos, Mark

المصدر: Conference: Presented at the 248th ACS National Meeting and Exhibition, 10-14 August 2014, San Francisco, California; Other Information: Preprints of Papers -- American Chemical Society, Division of Energy and Fuels

وصف الملف: Medium: X

URL الوصول: http://www.osti.gov/scitech/biblio/1236191

المؤلفون: Karolína Dlasková Jaklová, Lucie Šindelářová, Jan Kohout, Ivana Hradecká, Nikita Sharkov, Aleš Vráblík

المصدر: Processes; Volume 9; Issue 12; Pages: 2258
Processes, Vol 9, Iss 2258, p 2258 (2021)

مصطلحات موضوعية: Chemistry, hydrotreating, deactivation process, catalyst, Chemical technology, Process Chemistry and Technology, Chemical Engineering (miscellaneous), Bioengineering, TP1-1185, QD1-999

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ed1e70ea2d4291d3e754ba9f462374b8
https://doi.org/10.3390/pr9122258

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المؤلفون: Dominic C. Walter, Verena Steckenreiter, Jan Schmidt

المصدر: Energy Procedia 124 (2017)

مصطلحات موضوعية: Silicon, Materials science, Annealing (metallurgy), Rate constants, Recombination centers, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, Oxygen, Crystalline silicons, Degradation, Reaction rate constant, 0103 physical sciences, Exponential functions, Crystalline silicon, Czochralski silicon, Boron, permanent deactivation, Dewey Decimal Classification::300 | Sozialwissenschaften, Soziologie, Anthropologie::330 | Wirtschaft::333 | Boden- und Energiewirtschaft::333,7 | Natürliche Ressourcen, Energie und Umwelt, 010302 applied physics, carrier lifetime, PERC solar cells, Carrier lifetime, Boron-oxygen defects, 021001 nanoscience & nanotechnology, Exponential function, Deactivation process, chemistry, Illumination intensity, Chemical physics, boron-oxygen defect, ddc:333.7, Defects, 0210 nano-technology, ddc:333,7

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1136911d994e14a4c3d0fa69eadc3738

المؤلفون: Steckenreiter, Verena, Walter, Dominic C., Schmidt, Jan

المصدر: AIP Advances 7 (2017), Nr. 3
AIP Advances, Vol 7, Iss 3, Pp 035305-035305-6 (2017)

مصطلحات موضوعية: Carrier lifetime measurements, Rate constants, Carrier lifetime, Excess carrier concentration, lcsh:QC1-999, Crystalline silicons, Silicon wafers, Deactivation process, Boron-oxygen complex, Illumination intensity, Carrier concentration, ddc:500, Low illuminations, Deactivation rate, Dewey Decimal Classification::500 | Naturwissenschaften, lcsh:Physics

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ee498f5d2cecd3005de4257aacfd740
http://www.repo.uni-hannover.de/handle/123456789/1289