يعرض 1 - 10 نتائج من 552 نتيجة بحث عن '"hard switching"', وقت الاستعلام: 0.80s تنقيح النتائج
  1. 1
    مؤتمر
    Design and Component Selection of Three-Phase T-type Power Factor Correction (PFC) rectifier

    المؤلفون: Ghaderloo, Reza Asrar, Shen, Yidi, Gamwari, Ayodhya Somiruwan, Singhabahu, Chanaka, Khaligh, Alireza

    المصدر: 2024 6th Global Power, Energy and Communication Conference (GPECOM) Power, Energy and Communication Conference (GPECOM), 2024 6th Global. :29-34 Jun, 2024

    Relation: 2024 6th Global Power, Energy and Communication Conference (GPECOM)

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  2. 2
    مؤتمر
    Threshold voltage instability of p-GaN Gate HEMT in 48-12V Buck Converter & its Impact on Circuit Power Loss Variation

    المؤلفون: Wang, Kaidi, Huang, Shuting, Xiong, Qi, Huang, Qihang, Liu, Han, Zhang, Yunya, Chen, Kuangli, Duan, Enchuan, Ming, Xin, Zhang, Bo, Zhou, Qi

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :248-251 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  3. 3
    مؤتمر
    Investigation of False Turn-On Behavior of Schottky p-GaN HEMT in Bridge-Leg Circuit over −55 °C - 150 °C Operating Temperature Range

    المؤلفون: Fan, Zetao, Wang, Maojun, Wei, Jin, Song, Jiaojiao, Zhang, Jiaxin, Shen, Bo

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :275-278 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  4. 4
    مؤتمر
    In-Situ Extraction of Time-Resolved $E_{\text{OSS}}$ on GaN Power Device Based on a Modified Hard Switching Platform

    المؤلفون: Huang, Yifei, Jiang, Qimeng, Huang, Sen, Yin, Yulian, Tang, Xi, Wang, Xinhua, Liu, Xinyu

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :259-262 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  5. 5
    مؤتمر
    Versatile Dynamic On-Resistance Test Bench for GaN Power Transistors with Considerations for Soft and Hard Switching, Time-Resolved Test, Packaged and On-Wafer Devices

    المؤلفون: Lao, Yunhong, Nuo, Muqin, Zheng, Qian, Cui, Jiawei, Yang, Junjie, Liu, Sihang, Shen, Bo, Zhang, Meng, Wang, Maojun, Wei, Jin

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :534-537 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  6. 6
    مؤتمر
    A Programmable and Adaptive Dead-Time Controller for Low-Offset Output Generation for Cryo-Cooler Drive Applications

    المؤلفون: Kumar, Nishant, Gupta, Hari Shanker, Srivastava, Anuj, Mohapatra, Nihar Ranjan

    المصدر: 2024 IEEE International Symposium on Circuits and Systems (ISCAS) Circuits and Systems (ISCAS), 2024 IEEE International Symposium on. :1-5 May, 2024

    Relation: 2024 IEEE International Symposium on Circuits and Systems (ISCAS)

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  7. 7
    مؤتمر
    Research on Soft Switching of Four-Switch Buck-Boost Converter

    المؤلفون: Liu, Ye, Wang, Jianqiang

    المصدر: 2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia) Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia), 2024 IEEE 10th International. :1990-1995 May, 2024

    Relation: 2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia)

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  8. 8
    مؤتمر
    $\mathrm{R}_{\text{ON}}$ and $\mathrm{V}_{\text{TH}}$ Extraction in Hard-Switched E-mode GaN HEMTs: Impact of Passivation and Layout

    المؤلفون: Favero, D., De Santi, C., Stockman, A., Nardo, A., Vanmeerbeek, P., Tack, M., Meneghesso, G., Zanoni, E., Meneghini, M.

    المصدر: 2024 IEEE International Reliability Physics Symposium (IRPS) International Reliability Physics Symposium (IRPS), 2024 IEEE. :1-4 Apr, 2024

    Relation: 2024 IEEE International Reliability Physics Symposium (IRPS)

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  9. 9
    مؤتمر
    On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach

    المؤلفون: Boito, M., Fregolent, M., De Santi, C., Abbisogni, A., Smerzi, S., Rossetto, I., Iucolano, F., Meneghesso, G., Zanoni, E., Meneghini, M.

    المصدر: 2024 IEEE International Reliability Physics Symposium (IRPS) International Reliability Physics Symposium (IRPS), 2024 IEEE. :1-5 Apr, 2024

    Relation: 2024 IEEE International Reliability Physics Symposium (IRPS)

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  10. 10
    مؤتمر
    PCB Layout Design Impact on Three Level Buck Converters for USB3.1 PD Application

    المؤلفون: Bhandari, Abhishek, Ye, Hui

    المصدر: 2024 IEEE Applied Power Electronics Conference and Exposition (APEC) Applied Power Electronics Conference and Exposition (APEC), 2024 IEEE. :2208-2215 Feb, 2024

    Relation: 2024 IEEE Applied Power Electronics Conference and Exposition (APEC)

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