يعرض 1 - 10 نتائج من 12,088 نتيجة بحث عن '"high‐κ"', وقت الاستعلام: 0.87s تنقيح النتائج
  1. 1
    دورية أكاديمية
    Characterization and Reliability Study of an Al-Doped HfO₂-Based High-Density 2.5-D MIMCAP

    المؤلفون: Chery, E., Croes, K., Nolmans, P., Beyne, E.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(6):3845-3851 Jun, 2024

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  2. 2
    مؤتمر
    β-Ga2O3 Based Bulk-Planar Junctionless Transistor for Superior Electrostatic Integrity at Sub-7nm Technology

    المؤلفون: Gagan, Aggarwal, Akansha, Marothya, Himanshu

    المصدر: 2024 IEEE International Conference on Interdisciplinary Approaches in Technology and Management for Social Innovation (IATMSI) Interdisciplinary Approaches in Technology and Management for Social Innovation (IATMSI), 2024 IEEE International Conference on. 2:1-5 Mar, 2024

    Relation: 2024 IEEE International Conference on Interdisciplinary Approaches in Technology and Management for Social Innovation (IATMSI)

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  3. 3
    مؤتمر
    Influence of ALD pulse times and deposition temperature on electrical properties and reliability of MIM decoupling capacitors based on Al-doped ZrO2 high-κ dielectric in BEoL conditions

    المؤلفون: Falidas, Konstantinos Efstathios, Kuhnel, Kati, Everding, Maximilian, Czernohorsky, Malte, Heitmann, Johannes

    المصدر: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2024 8th IEEE. :1-3 Mar, 2024

    Relation: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

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  4. 4
    دورية أكاديمية
    Ultrafast (50 ns) ID–VG Analysis on Oxide Thin-Film Transistors With Morphotropic Phase Boundary State High-κ Gate Insulator

    المؤلفون: Jung, T., Nam, S., Jeon, S.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(5):3009-3014 May, 2024

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  5. 5
    دورية أكاديمية
    Monolithic 3-D Self-Aligned Heterogeneous Nanosheet Channel Complementary FETs With Matched VT by Band Alignments of Individual Channels

    المؤلفون: Hsieh, W., Tu, C., Chen, Y., Huang, B., Chen, W., Liu, Y., Cheng, C., Chou, H., Liu, C.W.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(5):3383-3389 May, 2024

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  6. 6
    دورية أكاديمية
    Dynamic RON Degradation in AlGaN/GaNMIS-HEMTs With Si3N4 or Si3N4/ZrO2Passivation Layer

    المؤلفون: Liang, Y., Zhang, Y., He, X., Zhao, Y., Yan, J., Wang, M., Liu, W.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(5):2914-2919 May, 2024

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  7. 7
    دورية أكاديمية
    Mechanism of Threshold Voltage Instability in Double Gate α-IGZO Nanosheet TFT Under Bias and Temperature Stress

    المؤلفون: Aslam, M., Chang, S., Chen, Y., Lee, Y., Li, Y., Lee, W.

    المصدر: IEEE Journal of the Electron Devices Society IEEE J. Electron Devices Soc. Electron Devices Society, IEEE Journal of the. 12:464-471 2024

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  8. 8
    دورية أكاديمية
    Temperature-Dependent Hydrogen Modulations of Ultra-Scaled a-IGZO Thin Film Transistor Under Gate Bias Stress

    المؤلفون: Aslam, M., Chang, S., Chuang, M., Chen, Y., Lee, Y., Li, Y.

    المصدر: IEEE Open Journal of Nanotechnology IEEE Open J. Nanotechnol. Nanotechnology, IEEE Open Journal of. 5:9-16 2024

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  9. 9
    مؤتمر
    A Study of Physical Unclonable Function by Dielectric Breakdown in High-κ Metal Gate Device

    المؤلفون: Lin, Geng-Shiu, King, Ya-Chin, Lin, Chrong-Jung

    المصدر: 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA) Technology, Systems and Applications (VLSI TSA), 2024 International VLSI Symposium on. :1-2 Apr, 2024

    Relation: 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA)

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  10. 10
    دورية أكاديمية
    Ab Initio Materials Modeling of Point Defects in a High-κ Metal Gate Stack of Scaled CMOS Devices: Variability Versus Engineering the Effective Work Function

    المؤلفون: Pandey, Rajan KumarAff1, IDs11664024113478_cor1

    المصدر: Journal of Electronic Materials. :1-19

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