المؤلفون: Xu, H., Feng, T., Li, X., Yang, Y., Zhang, D.W.

المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 70(6):3179-3184 Jun, 2023

المؤلفون: Shen, Y., He, Z., Shi, Y., Niu, H., Chen, Y., Liu, C., Cai, Z., Lu, G., Dai, X.

المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 70(3):1162-1167 Mar, 2023

المؤلفون: Cai, X., Chen, Y., Gao, R., Zhou, C.

المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 70(1):36-42 Jan, 2023

المؤلفون: Yu, Q., Ali, W., Cao, S., Wang, H., Lv, H., Sun, Y., Mo, R., Wang, Q., Mei, B., Sun, J., Zhang, H., Tang, M., Bai, S., Zhang, T., Bai, Y., Zhang, C.

المصدر: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 69(5):1127-1133 May, 2022

المؤلفون: Habersat, Daniel B., Lelis, Aivars J., Green, Ronald

المصدر: 2020 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2020 IEEE International. :1-4 Apr, 2020

Relation: 2020 IEEE International Reliability Physics Symposium (IRPS)

المؤلفون: Habersat, Daniel B., Green, Ronald, Lelis, Aivars J.

المصدر: 2019 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2019 IEEE International. :1-4 Mar, 2019

Relation: 2019 IEEE International Reliability Physics Symposium (IRPS)

المؤلفون: Chia-Hao Liu, Chong-Rong Huang, Hsiang-Chun Wang, Yi-Jie Kang, Hsien-Chin Chiu, Hsuan-Ling Kao, Kuo-Hsiung Chu, Hao-Chung Kuo, Chih-Tien Chen, Kuo-Jen Chang

المصدر: Micromachines, Vol 13, Iss 9, p 1554 (2022)

مصطلحات موضوعية: dynamic on-state resistance (Ron), field plate (FP), high-temperature gate bias (HTGB), high-temperature reverse bias (HTRB), normally off operation, off-state breakdown voltage, Mechanical engineering and machinery, TJ1-1570

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2072-666X/13/9/1554; https://doaj.org/toc/2072-666X

URL الوصول: https://doaj.org/article/c5a9587733df45609b8f5c0d64b2b60a

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المؤلفون: Aviñó Salvadó, Oriol

المساهمون: Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Ampère, Département Energie Electrique (EE), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon, Hervé Morel, STAR, ABES

المصدر: Electronics. Université de Lyon, 2018. English. ⟨NNT : 2018LYSEI110⟩

مصطلحات موضوعية: Electronique de puissance, [SPI.TRON] Engineering Sciences [physics]/Electronics, MOSFET en SiC, Time-Dependent dielectric breakdown - TDDB, [SPI.TRON]Engineering Sciences [physics]/Electronics, Intrinsic diode, Diode intrinsèque, Oxyde, SiC MOSFET, Insulated Gate Bipolar Transistor - IGBT, High Temperature Gate Bias - HTGB, SiO2, Power Electronics, Transistor bipolaire à grille isolée - IGBT

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::88899eac86a836a050bd1c8364ea0a75
https://tel.archives-ouvertes.fr/tel-02124585/document

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