يعرض 1 - 10 نتائج من 2,666 نتيجة بحث عن '"hot electrons"', وقت الاستعلام: 1.41s تنقيح النتائج
  1. 1
    مؤتمر
    Experimental Insights into the Role of Inter-valley and Defect Transitions of Hot Electrons in Determining Self-heating in AlGaN/GaN HEMTs

    المؤلفون: Chaudhuri, Rajarshi Roy, Joshi, Vipin, Wani, Saniya S., Karthik, Simran R., Malik, Rasik R., Shrivastava, Mayank

    المصدر: 2024 IEEE International Reliability Physics Symposium (IRPS) International Reliability Physics Symposium (IRPS), 2024 IEEE. :1-6 Apr, 2024

    Relation: 2024 IEEE International Reliability Physics Symposium (IRPS)

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  2. 2
    مؤتمر
    Gate Engineered AlGaN/GaN HEMT to Reduce the Trapping Effects and Improve Reliability

    المؤلفون: Venkateswarlu, R., Mishra, Guru Prasad, Acharya, B.

    المصدر: 2024 International Conference on Wireless Communications Signal Processing and Networking (WiSPNET) Wireless Communications Signal Processing and Networking (WiSPNET), 2024 International Conference on. :1-5 Mar, 2024

    Relation: 2024 International Conference on Wireless Communications Signal Processing and Networking (WiSPNET)

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  3. 3
    دورية أكاديمية
    High-Sensitivity MoO3-x/Bi2O2Se Hybrid Photodetector Operating at Wavelengths of O-Band and C-Band

    المؤلفون: Yu, Y., Liu, L., Cui, Y., Wang, Y., Tang, S., Liu, J., Lu, J.

    المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 45(4):613-616 Apr, 2024

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  4. 4
    مؤتمر
    Leveraging Design and Technology of the Sb2S3/Au Surface Plasmon Enhanced Hot-Electron Schottky Detectors for Telecom Wavelength Bands Applications

    المؤلفون: Cobianu, Cornel, Gheorghe, Marin, Santos, Gonzalo, Modreanu, Mircea, Gutierrez, Yael, Moreno, Fernando, Losurdo, Maria

    المصدر: 2023 International Semiconductor Conference (CAS) Semiconductor Conference (CAS), 2023 International. :117-120 Oct, 2023

    Relation: 2023 International Semiconductor Conference (CAS)

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  5. 5
    دورية أكاديمية
    Hot Electron-Induced Bremsstrahlung Emission in AlGaN/GaN Superlattice Castellated Field Effect Transistors

    المؤلفون: Kumar, A.S., Uren, M.J., Pomeroy, J.W., Smith, M.D., Afroz, S., Vasen, T., Howell, R.S., Kuball, M.

    المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 44(11):1821-1824 Nov, 2023

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  6. 6
    مؤتمر
    Generation of hot surface plasmons in graphene by a powerful optical beam

    المؤلفون: Dias, Rui, Cunha, Diogo, Vasilevskiy, Mikhail

    المصدر: 2023 23rd International Conference on Transparent Optical Networks (ICTON) Transparent Optical Networks (ICTON), 2023 23rd International Conference on. :1-4 Jul, 2023

    Relation: 2023 23rd International Conference on Transparent Optical Networks (ICTON)

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  7. 7
    مؤتمر
    Account and Application of Orthogonal Direct Magnetic and Electric Fields in the Development of New Microwave Frequency-Converting Devices

    المؤلفون: Malyshev, Igor V., Parshina, Natalia V.

    المصدر: 2023 Radiation and Scattering of Electromagnetic Waves (RSEMW) Radiation and Scattering of Electromagnetic Waves (RSEMW), 2023. :8-11 Jun, 2023

    Relation: 2023 Radiation and Scattering of Electromagnetic Waves (RSEMW)

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  8. 8
    مؤتمر
    A Simple, High-Speed Measurement Technique for Dynamic on-resistance of GaN Devices for Hard-Switched Pulsed Power Applications

    المؤلفون: Roy, Soham, Deng, Chenmin, Hanson, Alex J.

    المصدر: 2023 IEEE 24th Workshop on Control and Modeling for Power Electronics (COMPEL) Control and Modeling for Power Electronics (COMPEL), 2023 IEEE 24th Workshop on. :1-8 Jun, 2023

    Relation: 2023 IEEE 24th Workshop on Control and Modeling for Power Electronics (COMPEL)

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  9. 9
    مؤتمر
    Unique Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-doped GaN Buffer and its Reliability Consequences

    المؤلفون: Chaudhuri, Rajarshi Roy, Joshi, Vipin, Gupta, Amratansh, Joshi, Tanmay, Malik, Rasik Rashid, Mir, Mehak Ashraf, Gupta, Sayak Dutta, Shrivastava, Mayank

    المصدر: 2023 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2023 IEEE International. :1-5 Mar, 2023

    Relation: 2023 IEEE International Reliability Physics Symposium (IRPS)

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  10. 10
    مؤتمر
    Assessment of hot carrier stress induced threshold voltage shift in gate-all-around MOSFETs

    المؤلفون: Kumar, Pankaj, Koley, Kalyan, Goswami, Rupam, Maurya, Ashish, Kumar, Subindu

    المصدر: 2022 IEEE 19th India Council International Conference (INDICON) India Council International Conference (INDICON), 2022 IEEE 19th. :1-4 Nov, 2022

    Relation: 2022 IEEE 19th India Council International Conference (INDICON)

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