المؤلفون: Chang, C., Wang, C., Shen, Y., Wu, T., Kuo, W., Lin, S., Huang, C.

المصدر: IEEE Journal of the Electron Devices Society IEEE J. Electron Devices Soc. Electron Devices Society, IEEE Journal of the. 9:2-5 2021

المؤلفون: Chang, C., Shen, Y., Wang, C., Tang, S., Wu, T., Kuo, W., Lin, S., Huang, C.

المصدر: IEEE Journal of the Electron Devices Society IEEE J. Electron Devices Soc. Electron Devices Society, IEEE Journal of the. 9:687-690 2021

المؤلفون: Chih-Yao Chang, Chien-Sheng Wang, Ching-Yao Wang, Yao-Luen Shen, Tian-Li Wu, Wei-Hung Kuo, Suh-Fang Lin, Chih-Fang Huang

المصدر: IEEE Journal of the Electron Devices Society, Vol 9, Pp 2-5 (2021)

مصطلحات موضوعية: GaN, high electron mobility transistor (HEMT), indium–tin–oxide gate electrode, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9223718/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/e88bdee7d92a42968b3d4ce3ce86174b

المؤلفون: Chih-Yao Chang, Yao-Luen Shen, Ching-Yao Wang, Shun-Wei Tang, Tian-Li Wu, Wei-Hung Kuo, Suh-Fang Lin, Chih-Fang Huang

المصدر: IEEE Journal of the Electron Devices Society, Vol 9, Pp 687-690 (2021)

مصطلحات موضوعية: GaN, high electron mobility transistor (HEMT), indium–tin–oxide gate electrode, PBTI, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9480594/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/62d9ad8fc9cf4cc3a126b23577723831