يعرض 1 - 10 نتائج من 80 نتيجة بحث عن '"inner spacer"', وقت الاستعلام: 1.27s تنقيح النتائج
  1. 1
    مؤتمر
    Challenges of Gate Stack TDDB in Gate-All-Around Nanosheet Towards Further Scaling

    المؤلفون: Zhou, Huimei, Wang, Miaomiao, Wu, Ernest

    المصدر: 2024 IEEE International Reliability Physics Symposium (IRPS) International Reliability Physics Symposium (IRPS), 2024 IEEE. :2A.1-1-2A.1-6 Apr, 2024

    Relation: 2024 IEEE International Reliability Physics Symposium (IRPS)

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  2. 2
    مؤتمر
    Optimization of Ge Mole Fraction in Sacrificial Layers for Sub-3-nm Node Silicon Nanosheet FETs

    المؤلفون: Lee, Sanguk, Jeong, Jinsu, Yoon, Jun-Sik, Baek, Seunghwan Lee, Lee, Junjong, Lim, Jaewan, Baek, Rock-Hyun

    المصدر: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2023 7th IEEE. :1-3 Mar, 2023

    Relation: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

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  3. 3
    دورية أكاديمية
    Novel Trench Inner-Spacer Scheme to Eliminate Parasitic Bottom Transistors in Silicon Nanosheet FETs

    المؤلفون: Jeong, J., Yoon, J., Lee, S., Baek, R.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 70(2):396-401 Feb, 2023

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  4. 4
    دورية أكاديمية
    Simulation-Based Study of High-Permittivity Inserted-Oxide FinFET With Low-Permittivity Inner Spacers

    المؤلفون: Wu, Y., Chiang, M., Chen, J.F., Liu, T.K.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 68(11):5529-5534 Nov, 2021

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  5. 5
    مؤتمر
    A new technique for evaluating stacked nanosheet inner spacer TDDB reliability

    المؤلفون: Shen, Tian, Watanabe, Koji, Zhou, Huimei, Belyansky, Michael, Stuckert, Erin, Zhang, Jingyun, Greene, Andrew, Basker, Veeraraghavan, Wang, Miaomiao

    المصدر: 2020 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2020 IEEE International. :1-5 Apr, 2020

    Relation: 2020 IEEE International Reliability Physics Symposium (IRPS)

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  6. 6
    مؤتمر
    Speed Optimization of Vertically Stacked Gate-All-Around MOSFETs with Inner Spacers for Low Power and Ultra-Low Power Applications

    المؤلفون: Huang, Ya-Chi, Chiang, Meng-Hsueh, Wang, Shui-Jinn

    المصدر: 20th International Symposium on Quality Electronic Design (ISQED) Quality Electronic Design (ISQED), 20th International Symposium on. :231-234 Mar, 2019

    Relation: 2019 20th International Symposium on Quality Electronic Design (ISQED)

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  7. 7
    دورية أكاديمية
    Design and Optimization of Triple-k Spacer Structure in Two-Stack Nanosheet FET From OFF-State Leakage Perspective

    المؤلفون: Ryu, D., Kim, M., Kim, S., Choi, Y., Yu, J., Lee, J., Park, B.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 67(3):1317-1322 Mar, 2020

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  8. 8
    كتاب إلكتروني
    Finite Element Analysis of Steel Tube Bundle Composite Shear Wall with Different Constructions

    المؤلفون: Wan, ShengwuAff12, Cheng, XueyuanAff12

    المساهمون: di Prisco, Marco, Series EditorAff1, Chen, Sheng-Hong, Series EditorAff2, Vayas, Ioannis, Series EditorAff3, Kumar Shukla, Sanjay, Series EditorAff4, Sharma, Anuj, Series EditorAff5, Kumar, Nagesh, Series EditorAff6, Wang, Chien Ming, Series EditorAff7, Wang, Shuren, editorAff8, Li, Jingan, editorAff9, Hu, Kui, editorAff10, Bao, Xingxian, editorAff11

    المصدر: Proceedings of the 2nd International Conference on Innovative Solutions in Hydropower Engineering and Civil Engineering. 235:295-302

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  9. 9
    دورية أكاديمية
    A Comprehensive Study of NF3-Based Selective Etching Processes: Application to the Fabrication of Vertically Stacked Horizontal Gate-All-around Si Nanosheet Transistors

    المؤلفون: Xin Sun, Jiayang Li, Lewen Qian, Dawei Wang, Ziqiang Huang, Xinlong Guo, Tao Liu, Saisheng Xu, Liming Wang, Min Xu, David Wei Zhang

    المصدر: Nanomaterials, Vol 14, Iss 11, p 928 (2024)

    مصطلحات موضوعية: gate-all-around, Si nanosheet, transistors, inner spacer, channel release, isotropic dry etching, Chemistry, QD1-999

    وصف الملف: electronic resource

    Relation: https://www.mdpi.com/2079-4991/14/11/928; https://doaj.org/toc/2079-4991

    URL الوصول: https://doaj.org/article/e5f262d33afd4209adc9b4501e935563

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  10. 10
    دورية أكاديمية
    Punch-Through-Stopper Free Nanosheet FETs With Crescent Inner-Spacer and Isolated Source/Drain

    المؤلفون: Yoon, J., Jeong, J., Lee, S., Baek, R.

    المصدر: IEEE Access Access, IEEE. 7:38593-38596 2019

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