يعرض 1 - 10 نتائج من 2,063 نتيجة بحث عن '"low bandgap"', وقت الاستعلام: 1.56s تنقيح النتائج
  1. 1
    مؤتمر
    Double Gate TFET with Germanium Pocket and Metal drain using Dual Oxide

    المؤلفون: Khan, Anam, Loan, Sajad A.

    المصدر: 2021 International Conference on Microelectronics (ICM) Microelectronics (ICM), 2021 International Conference on. :170-173 Dec, 2021

    Relation: 2021 International Conference on Microelectronics (ICM)

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  2. 2
    دورية أكاديمية
    A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET

    المؤلفون: Huu Thai Bui, Chun-Hsing Shih, Dang Chien Nguyen

    المصدر: Tạp chí Khoa học Đại học Đà Lạt, Vol 14, Iss 3S (2024)

    مصطلحات موضوعية: Band-to-band tunneling, Channel-buried oxide, Doping pocket, Line tunneling, Low bandgap TFET., General Works

    وصف الملف: electronic resource

    Relation: https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/1313; https://doaj.org/toc/0866-787X

    URL الوصول: https://doaj.org/article/365b821bbd59401e8682f4d8ecb5bef9

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  3. 3
    مؤتمر
    Ultra-Thin Si(1_x) Ge(x) Envelope Layer Induced Hole Quantum Well in Cylindrical Surrounding Gate p-FET with ITRS Considerations

    المؤلفون: Shafi, Nawaz, Porwal, Ankita, Parmaar, Jaydeep Singh, Bhat, Aasif Mohammad, Sahu, Chitrakant, Periasamy, C.

    المصدر: 2019 IEEE International Symposium on Smart Electronic Systems (iSES) (Formerly iNiS) Smart Electronic Systems (iSES) (Formerly iNiS), 2019 IEEE International Symposium on. :360-364 Dec, 2019

    Relation: 2019 IEEE International Symposium on Smart Electronic Systems (iSES) (Formerly iNiS)

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  4. 4
    دورية أكاديمية
    Digital Logic and Asynchronous Datapath With Heterogeneous TFET-MOSFET Structure for Ultralow-Energy Electronics

    المؤلفون: Hung, J., Wang, P., Lo, Y., Yang, C., Tsui, B.

    المصدر: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits IEEE J. Explor. Solid-State Comput. Devices Circuits Exploratory Solid-State Computational Devices and Circuits, IEEE Journal on. 6(2):130-137 Dec, 2020

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  5. 5
    دورية أكاديمية
    Device and Circuit-Level Assessment of GaSb/Si Heterojunction Vertical Tunnel-FET for Low-Power Applications

    المؤلفون: Tripathy, M.R., Singh, A.K., Samad, A., Chander, S., Baral, K., Singh, P.K., Jit, S.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 67(3):1285-1292 Mar, 2020

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  6. 6
    مؤتمر
    An Extensive Simulation Study of Gaussian Drain Doped Heterojunction Double Gate TFET

    المؤلفون: Sahoo, Sasmita, Dash, Sidhartha, Mishra, Guru Prasad

    المصدر: 2018 IEEE Electron Devices Kolkata Conference (EDKCON) Electron Devices Kolkata Conference (EDKCON), 2018 IEEE. :283-287 Nov, 2018

    Relation: 2018 IEEE Electron Devices Kolkata Conference (EDKCON)

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  7. 7
    دورية أكاديمية
    Germanium pocket based tunnel FET with underlap: design and simulation

    المؤلفون: Khan, Anam, Alharbi, Abdullah G., Loan, Sajad A.Aff1, IDs10470022021099_cor3

    المصدر: Analog Integrated Circuits and Signal Processing: An International Journal. 114(2):207-215

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  8. 8
    دورية أكاديمية
    Progress and outlook of Sn–Pb mixed perovskite solar cells

    المؤلفون: Hyemin Lee, Seok Beom Kang, Sangwook Lee, Kai Zhu, Dong Hoe Kim

    المصدر: Nano Convergence, Vol 10, Iss 1, Pp 1-16 (2023)

    مصطلحات موضوعية: Sn–Pb mixed perovskite, Narrow bandgap, Low bandgap, Mixed tin–lead, Perovskite solar cells, Tandem solar cells, Technology, Chemical technology, TP1-1185, Biotechnology, TP248.13-248.65, Science, Physics, QC1-999

    وصف الملف: electronic resource

    Relation: https://doaj.org/toc/2196-5404

    URL الوصول: https://doaj.org/article/bce6f6b6080446e489c5663cb51e4325

    Find this article in full text from Springer Verlag. Find this article in full text from ProQuest Full Text Finder
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  9. 9
    مؤتمر
    Increasing drain voltage of low-bandgap tunnel field-effect transistors by drain engineering

    المؤلفون: Dang Chien, Nguyen, Shih, Chun-Hsing, Chen, Yu-Hsuan, Thu, Nguyen Thi

    المصدر: 2016 International Conference on Electronics, Information, and Communications (ICEIC) Electronics, Information, and Communications (ICEIC), 2016 International Conference on. :1-4 Jan, 2016

    Relation: 2016 International Conference on Electronics, Information, and Communications (ICEIC)

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  10. 10
    دورية أكاديمية
    Low-Bandgap Mixed Tin–Lead Perovskite Solar Cells

    المؤلفون: Jingwei Zhu, Cong Chen, Dewei Zhao

    المصدر: Solar, Vol 2, Iss 3, Pp 334-340 (2022)

    مصطلحات موضوعية: low-bandgap perovskites, perovskite solar cells, tandem solar cells, mixed tin–lead, Production of electric energy or power. Powerplants. Central stations, TK1001-1841

    وصف الملف: electronic resource

    Relation: https://www.mdpi.com/2673-9941/2/3/19; https://doaj.org/toc/2673-9941

    URL الوصول: https://doaj.org/article/5bfb67fbb0944997972b1ff15fc49b90

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