المؤلفون: Wang, H., Pu, T., Li, X., Liu, C., Wu, J., Yang, J., Zhang, Z., Lu, Y., Wang, Q., Song, L., Chiu, H., Ao, J., Liu, X.

المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 69(9):4859-4863 Sep, 2022

المؤلفون: Ahn, Woojin, Seok, Ogyun, Ha, Min-Woo, Kim, Young-Shil, Han, Min-Koo

المصدر: 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on. :311-314 May, 2013

Relation: 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

المؤلفون: Huang, Huolin, Liang, Yung C., Samudra, Ganesh S., Huang, Chih-Fang

المصدر: 2013 IEEE 10th International Conference on Power Electronics and Drive Systems (PEDS) Power Electronics and Drive Systems (PEDS), 2013 IEEE 10th International Conference on. :555-558 Apr, 2013

Relation: 2013 IEEE 10th International Conference on Power Electronics and Drive Systems (PEDS 2013)

المؤلفون: Kuroda, M., Ueda, T., Tanaka, T.

المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 57(2):368-372 Feb, 2010

المؤلفون: Chia-Hao Liu, Chong-Rong Huang, Hsiang-Chun Wang, Yi-Jie Kang, Hsien-Chin Chiu, Hsuan-Ling Kao, Kuo-Hsiung Chu, Hao-Chung Kuo, Chih-Tien Chen, Kuo-Jen Chang

المصدر: Micromachines, Vol 13, Iss 9, p 1554 (2022)

مصطلحات موضوعية: dynamic on-state resistance (Ron), field plate (FP), high-temperature gate bias (HTGB), high-temperature reverse bias (HTRB), normally off operation, off-state breakdown voltage, Mechanical engineering and machinery, TJ1-1570

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2072-666X/13/9/1554; https://doaj.org/toc/2072-666X

URL الوصول: https://doaj.org/article/c5a9587733df45609b8f5c0d64b2b60a

المؤلفون: Ketteniss, N., Behmenburg, H., Hahn, H., Noculak, A., Hollander, B., Kalisch, H., Heuken, M., Vescan, A.

المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 33(4):519-521 Apr, 2012

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المؤلفون: NGUYEN, DAI DUONG

مصطلحات موضوعية: interface charge engineering, AlGaN/GaN, normally-off operation, AlTiO, ComputingMilieux_THECOMPUTINGPROFESSION, III-V compound semiconductor, ComputerApplications_COMPUTERSINOTHERSYSTEMS

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=jairo_______::66103d1e146a63f549053974b76be87f
http://hdl.handle.net/10119/17767

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