يعرض 1 - 10 نتائج من 13,894 نتيجة بحث عن '"p-AlGaN"', وقت الاستعلام: 1.89s تنقيح النتائج
  1. 1
    دورية أكاديمية
    P-GaN/p-AlGaN/AlGaN/GaN Heterojunction Field-Effect Transistor With a Threshold Voltage of 6 V

    المؤلفون: Kim, D., Yim, J., Lee, M., Chae, M., Kim, H., Cha, H.

    المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 45(6):972-975 Jun, 2024

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  2. 2
    دورية أكاديمية
    Enhancing the Hole Injection in AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With Engineered p-AlGaN Hole Supplier Layer

    المؤلفون: Qi, Y., Tian, W., Liu, M., Li, S., Liu, C.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(5):3077-3083 May, 2024

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  3. 3
    دورية أكاديمية
    Research on a High-Threshold-Voltage AlGaN/GaN HEMT with P-GaN Cap and Recessed Gate in Combination with Graded AlGaN Barrier Layer

    المؤلفون: Chen, Zhichao, Cai, LieAff1, IDs11664024109683_cor2, Niu, Kai, Xu, Chaozhi, Lin, Haoxiang, Ren, Pengpeng, Sun, Dong, Lin, Haifeng

    المصدر: Journal of Electronic Materials. 53(5):2533-2543

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  4. 4
    دورية أكاديمية
    Investigation into epitaxial growth optimization of a novel AlGaN/GaN HEMT structure for application in UV photodetectors
    可用于紫外光电探测器的新型AlGaN/GaN HEMT结 构外延生长优化研究

    المؤلفون: Liu, Zhiyuan, Wu, Wanglong, Yang, Xiong, Zhang, Menglong, Han, Lixiang, Lei, Jianpeng, Zheng, Quansheng, Huo, NengjieAff1, IDs4084302429428_cor8, Wang, XiaozhouAff3, IDs4084302429428_cor9, Li, JingboAff2, IDs4084302429428_cor10

    المصدر: Science China Materials. :1-10

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  5. 5
    دورية أكاديمية
    Gate Leakage Suppression and Threshold Voltage Stability Improvement in GaN-Based Enhancement-Mode HEMTs on Ultrathin-Barrier AlGaN/GaN Heterostructures with a p-Doping-Free GaN Cap

    المؤلفون: Wang, YuhaoAff1, Aff2, Huang, SenAff1, Aff2, IDs1166402411156z_cor2, Jiang, QimengAff1, Aff2, IDs1166402411156z_cor3, Wang, XinhuaAff1, Aff2, Guo, FuqiangAff1, Aff2, Feng, ChaoAff1, Aff2, Fan, JieAff1, Aff2, Yin, HaiboAff1, Aff2, Gao, XinguoAff1, Aff2, Wei, KeAff1, Aff2, Zheng, YingkuiAff1, Aff2, Liu, XinyuAff1, Aff2

    المصدر: Journal of Electronic Materials. 53(7):3926-3932

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  6. 6
    دورية أكاديمية
    Improved AlGaN–GaN MQW LED performance incorporating InAlN MLB and AlN back barrier: Li-Fi applications

    المؤلفون: Kourdi, Zakarya, Adardour, Haroun ErrachidAff2, Aff3, IDs12648024032816_cor2, Four, ImaneAff2, Aff3, Khaouani, MohammedAff4, Aff5

    المصدر: Indian Journal of Physics. :1-10

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  7. 7
    دورية أكاديمية
    Effect of tunnelling in double barrier nitride (AlGaN/GaN) heterojunction

    المؤلفون: Patil, JyotiAff1, IDs1264802403234z_cor1, Shaikh, Shoyebmohamad F., Nakate, Umesh T., More, Pravin S., Al-Enizi, Abdullah M., Khollam, Yogesh B.

    المصدر: Indian Journal of Physics. :1-13

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  8. 8
    دورية أكاديمية
    Investigation of Double RESURF P-GaN Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Partial N-GaN Channels

    المؤلفون: Li, Huan, Bai, ZhiyuanAff1, Aff2, IDs11664024109870_cor2, Yang, Lian

    المصدر: Journal of Electronic Materials. 53(5):2562-2572

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  9. 9
    دورية أكاديمية
    Numerical Investigation of Zero-Dimensional Freestanding Nanowire FER-AlGaN/GaN HEMTs for Low-Power Applications

    المؤلفون: Raj Kumar, S.Aff1, IDs13369023083882_cor1, Balamurugan, N. B., Suguna, M., Sriram Kumar, D.

    المصدر: Arabian Journal for Science and Engineering. 49(5):7197-7208

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  10. 10
    دورية أكاديمية
    Effects of Electron Blocking Layer Thickness on the Electrical and Optical Properties of AlGaN-Based Deep-Ultraviolet Light-Emitting Diode

    المؤلفون: Hairol Aman, Mohammad AmirulAff1, Aff2, Ahmad Noorden, Ahmad FakhrurraziAff1, Aff2, IDs1166402411190x_cor2, Abdul Kadir, Muhammad ZamzuriAff1, Aff2, Danial, Wan Hazman, Daud, Suzairi

    المصدر: Journal of Electronic Materials. 53(8):4802-4811

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