يعرض 1 - 10 نتائج من 656 نتيجة بحث عن '"p-gan gate"', وقت الاستعلام: 1.07s تنقيح النتائج
  1. 1
    دورية أكاديمية
    Modeling Gate Leakage Current for p-GaN Gate HEMTs With Engineered Doping Profile

    المؤلفون: Alaei, M., Borga, M., Fabris, E., Decoutere, S., Lauwaert, J., Bakeroot, B.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(8):4563-4569 Aug, 2024

    Full Text Finder
    أضف إلى المفضلة
  2. 2
    دورية أكاديمية
    Investigation of Electrical Characteristics and Trapping Effects in p-GaN Gate HEMTs Under Electron Irradiation

    المؤلفون: Feng, Z., Feng, S., Pan, S., Li, X., You, B., Zhang, B., Wang, Y., Zhang, Y., Zheng, X.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(8):4543-4548 Aug, 2024

    Full Text Finder
    أضف إلى المفضلة
  3. 3
    دورية أكاديمية
    TCAD Simulation of the Effect of Buffer Layer Parameters on Single Event Burn-Out in p-GaN Gate HEMTs

    المؤلفون: Zhang, G., Zhao, S., Wang, Z., Song, X., Liu, S., Sun, X., Yu, L., You, S., Liu, Z., Hao, Y., Zhang, J.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(7):4119-4124 Jul, 2024

    Full Text Finder
    أضف إلى المفضلة
  4. 4
    دورية أكاديمية
    Investigating Forward Gate ESD Mechanism of Schottky-Type p-GaN Gate HEMTs Using a SiC-Based High-Speed Pulsed I-V Test System

    المؤلفون: Sun, J., Zheng, Z., Shu, J., Chen, K.J.

    المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 45(7):1265-1268 Jul, 2024

    Full Text Finder
    أضف إلى المفضلة
  5. 5
    دورية أكاديمية
    p-GaN Gate HEMTs on 6-Inch Sapphire by CMOS-Compatible Process: A Promising Game Changer for Power Electronics

    المؤلفون: Han, Z., Li, X., Ji, J., Chen, L., Wang, L., Cheng, Z., Yang, W., You, S., Li, Z., Hao, Y., Zhang, J.

    المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 45(7):1257-1260 Jul, 2024

    Full Text Finder
    أضف إلى المفضلة
  6. 6
    مؤتمر
    Self-Protection Mechanism of Schottky-Type p-GaN Gate HEMTs Under Forward Gate ESD Stress

    المؤلفون: Sun, Jiahui, Shu, Ji, Zheng, Zheyang, Chen, Kevin J.

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :271-274 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

    Full Text Finder
    أضف إلى المفضلة
  7. 7
    مؤتمر
    Threshold voltage instability of p-GaN Gate HEMT in 48-12V Buck Converter & its Impact on Circuit Power Loss Variation

    المؤلفون: Wang, Kaidi, Huang, Shuting, Xiong, Qi, Huang, Qihang, Liu, Han, Zhang, Yunya, Chen, Kuangli, Duan, Enchuan, Ming, Xin, Zhang, Bo, Zhou, Qi

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :248-251 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

    Full Text Finder
    أضف إلى المفضلة
  8. 8
    مؤتمر
    An Enhancement-Mode Algan/GaN HEMT with Island-Ohmic p-GaN Featuring Stable Threshold voltage and Large Gate Swing

    المؤلفون: Dai, Xinyue, Jiang, Qimeng, Feng, Chao, Ji, Zhongchen, Huang, Sen, Xing, Runxian, Yu, Guohao, Gao, Xinguo, Wang, Xinhua, Liu, Xinyu

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :168-171 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

    Full Text Finder
    أضف إلى المفضلة
  9. 9
    مؤتمر
    Suppression of Hot-Electron-Induced Dynamic RON Degradation in p-GaN Gate HEMT Using Active Passivation and Virtual Body

    المؤلفون: Yang, Junjie, Yu, Jingjing, Wu, Yanlin, Cui, Jiawei, Yang, Han, Yang, Xuelin, Zhang, Meng, Shen, Bo, Wang, Maojun, Wei, Jin

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :530-533 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

    Full Text Finder
    أضف إلى المفضلة
  10. 10
    مؤتمر
    Metal/Insulator/p-GaN Gate Virtual-Body HEMT for Large Gate Swing and Effective hole Injection

    المؤلفون: Yang, Junjie, Yu, Jingjing, Cui, Jiawei, Li, Teng, Lao, Yunhong, Yang, Xuelin, Shen, Bo, Liu, Xiaosen, Wang, Yan, Zhang, Meng, Wang, Maojun, Wei, Jin

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :287-290 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

    Full Text Finder
    أضف إلى المفضلة
أدوات البحث: أحصل على تغذية RSS – أرسل هذا البحث بالبريد الإلكتروني – حفظ البحث – جدول التنبيهات: لا شيء