المؤلفون: Fedeli, P., Puzzanghera, M., Moscatelli, F., Minamisawa, R. A., Alfieri, G., Grossner, U., Nipoti, R.

المصدر: 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) Silicon Carbide & Related Materials (ECSCRM), European Conference on. :1-1 Sep, 2016

Relation: 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM)

المؤلفون: Mehadi Hasan Ziko, Ants Koel, Toomas Rang, Muhammad Haroon Rashid

المصدر: Crystals, Vol 10, Iss 8, p 636 (2020)

مصطلحات موضوعية: p-type 4H-SiC, diffusion welding, inhomogeneity, Schottky barrier diode, barrier height, ideality factor, Crystallography, QD901-999

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2073-4352/10/8/636; https://doaj.org/toc/2073-4352

URL الوصول: https://doaj.org/article/a0bd33bd183142c7a3d9f84ee00ce00d

المؤلفون: Paradzah, A. T., Omotoso, E., Legodi, M. J., Auret, F. D., Meyer, W. E., Diale, M.

المصدر: Journal of Electronic Materials. August 2016 45(8):4177-4182

المؤلفون: Yongwei Li, Ting Liang, Cheng Lei, Yingping Hong, Wangwang Li, Zhiqiang Li, Abdul Ghaffar, Qiang Li, Jijun Xiong

المصدر: Micromachines, Vol 10, Iss 10, p 629 (2019)

مصطلحات موضوعية: p-type 4H-SiC, piezoresistive effect, ohmic contact, cantilever beam, Mechanical engineering and machinery, TJ1-1570

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2072-666X/10/10/629; https://doaj.org/toc/2072-666X

URL الوصول: https://doaj.org/article/f12dbc352612418bab6c1f04c1a667ea

لا يتم عرض هذه النتيجة على الضيوف.
تسجيل الدخول للوصول الكامل.

لا يتم عرض هذه النتيجة على الضيوف.
تسجيل الدخول للوصول الكامل.

المؤلفون: Kajihara, J., Kuroki, S. -I, Ishikawa, S., Maeda, T., Sezaki, H., Makino, T., Ohshima, T., Östling, Mikael, Zetterling, Carl-Mikael, 1966

المصدر: International Conference on Silicon Carbide and Related Materials, ICSCRM 2017. :423-427

مصطلحات موضوعية: 4H-SiC, Harsh environment electronics, Nickel, Niobium, Ohmic contact, pMOSFET, Binary alloys, Electric contactors, MOSFET devices, Nickel alloys, Niobium alloys, Ohmic contacts, Silicides, Titanium alloys, Al doped, Harsh environment, Ni alloys, p-MOSFETs, P-type 4H-SiC, Silicon carbide

وصف الملف: print

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-236375
https://www.mrs.org/icscrm-2017

المؤلفون: Oder, T.N., Martin, P., Adedeji, A.V., Isaacs-Smith, T., Williams, J.R.

المصدر: Journal of Electronic Materials. July 2007 36(7):805-811

المؤلفون: Gao, M., Tsukimoto, S., Goss, S.H., Tumakha, S.P., Onishi, T., Murakami, M., Brillson, L.J.

المصدر: Journal of Electronic Materials. April 2007 36(4):277-284

المؤلفون: Muhammad Haroon Rashid, Ants Koel, Toomas Rang, Mehadi Hasan Ziko

المصدر: Crystals
Volume 10
Issue 8
Crystals, Vol 10, Iss 636, p 636 (2020)

مصطلحات موضوعية: Schottky barrier diode, Materials science, General Chemical Engineering, Schottky barrier, Thermionic emission, 02 engineering and technology, Substrate (electronics), Diffusion welding, 01 natural sciences, 7. Clean energy, barrier height, Inorganic Chemistry, chemistry.chemical_compound, diffusion welding, inhomogeneity, ideality factor, 0103 physical sciences, Silicon carbide, lcsh:QD901-999, General Materials Science, p-type 4H-SiC, Diode, 010302 applied physics, business.industry, Schottky diode, Atmospheric temperature range, 021001 nanoscience & nanotechnology, Condensed Matter Physics, chemistry, Optoelectronics, lcsh:Crystallography, 0210 nano-technology, business

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7a03e87d98f02bdff995609d5ec70e09