المؤلفون: Hao, Xin, Wang, Chao, Luo, Guoling, Yao, Mengqi, Tan, Chao, Wang, Zegao

المصدر: 2023 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO) Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), 2023 IEEE International Conference on. :30-34 Jul, 2023

Relation: 2023 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO)

المؤلفون: Saha, N.C., Shiratsuchi, T., Oishi, T., Kasu, M.

المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 44(10):1704-1707 Oct, 2023

المؤلفون: Saha, N.C., Shiratsuchi, T., Kim, S., Koyama, K., Oishi, T., Kasu, M.

المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 44(6):975-978 Jun, 2023

المؤلفون: Saha, N.C., Shiratsuchi, T., Kim, S., Koyama, K., Oishi, T., Kasu, M.

المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 44(5):793-796 May, 2023

المؤلفون: Sheremet, Volodymyr, Rabbe, Md Fazle, Avrutin, Vitaliy, Ozgur, Umit, Dhar, Nibir K.

المصدر: 2023 IEEE Research and Applications of Photonics in Defense Conference (RAPID) Photonics in Defense Conference (RAPID), 2023 IEEE Research and Applications of. :1-2 Sep, 2023

Relation: 2023 IEEE Research and Applications of Photonics in Defense Conference (RAPID)

المؤلفون: Saha, N.C., Irie, Y., Seki, Y., Hoshino, Y., Nakata, J., Kim, S., Oishi, T., Kasu, M.

المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 44(2):293-296 Feb, 2023

المؤلفون: Yang, Jiali^{Aff1, Aff3}, Liu, Yu^{Aff4, Aff5}, Wang, En-Yang, Pang, Jinbo^{Aff1, Aff3, IDs1227402361967_cor4}, Huang, Shirong^{Aff15, Aff16, Aff17, Aff18}, Gemming, Thomas, Bi, Jinshun^{Aff6, Aff7, Aff8, IDs1227402361967_cor7}, Bachmatiuk, Alicja, Jia, Hao, Hu, Shu-Xian^{Aff10, IDs1227402361967_cor10}, Jiang, Chongyun, Liu, Hong^{Aff1, Aff14, IDs1227402361967_cor12}, Cuniberti, Gianaurelio^{Aff15, Aff16, Aff17, Aff18, IDs1227402361967_cor13}, Zhou, Weijia, Rümmeli, Mark H.^{Aff2, Aff4, Aff5, Aff12, Aff13, IDs1227402361967_cor15}

المصدر: Nano Research. 17(4):3232-3244

المؤلفون: Vrublevsky, Igor A., Lushpa, Nikita V., Tuchkovsky, Alexander K., Aleksandrova, Mariya P., Bunevich, Mikhail A.

المصدر: 2022 XXXI International Scientific Conference Electronics (ET) Scientific Conference Electronics (ET), 2022 XXXI International. :1-4 Sep, 2022

Relation: 2022 XXXI International Scientific Conference Electronics (ET)

المؤلفون: Yuyan Wang, Sihao Xia, Yu Diao, Hongkai Shi, Xian Wu, Yuting Dai, Caixia Kan, Daning Shi

المصدر: Journal of Materials Research and Technology, Vol 30, Iss , Pp 5512-5522 (2024)

مصطلحات موضوعية: AlxGa1-xN nanowires, p-type doping, Bandgap, Effective mass, Bond population, Mining engineering. Metallurgy, TN1-997

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2238785424009943; https://doaj.org/toc/2238-7854

URL الوصول: https://doaj.org/article/8eb01cb7fa1240779aaad4762ee87bbe

المؤلفون: Saha, N.C., Kim, S., Koyama, K., Oishi, T., Kasu, M.

المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 44(1):112-115 Jan, 2023