المؤلفون: Seyed Hossein Alavi Lavasani, Ali Medi

المصدر: The Journal of Engineering (2019)

مصطلحات موضوعية: gallium arsenide, indium compounds, iii-v semiconductors, aluminium compounds, phase noise, microwave oscillators, lc circuits, satellite communication, radio receivers, microwave field effect transistors, size 0.25 mum, frequency 19.25 ghz, algaas-ingaas, pseudomorphic high-electron-mobility transistors process, phase noise performance, circuit common mode resonator, lc oscillator output signal quality, ka-band satellite receiver, ka-band satellite receiver oscillator, parasitic capacitances, implicit common-mode resonance, higher oscillator fom, twice the oscillation frequency, differential lc oscillator, tuned parasitic elements, broadband frequency range, specific precise frequency, Engineering (General). Civil engineering (General), TA1-2040

وصف الملف: electronic resource

Relation: https://digital-library.theiet.org/content/journals/10.1049/joe.2018.9428; https://doaj.org/toc/2051-3305

URL الوصول: https://doaj.org/article/c15d0091b057439bb8ba40b68d28b109

المؤلفون: Bernard Jarry, Rachid Hamani, Mien Lintignat, Cristian Andrei

المساهمون: Systèmes RF (XLIM-SRF), XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), NXP Semiconductors

المصدر: ICECS
Electronics, Circuits and Systems (ICECS), 2014 21st IEEE International Conference on
Electronics, Circuits and Systems (ICECS), 2014 21st IEEE International Conference on, 2014, Unknown, Unknown Region. pp.351-354, ⟨10.1109/ICECS.2014.7049994⟩

مصطلحات موضوعية: Integrated circuit interconnections, Engineering, Circuit design, output impedance, Impedance matching, 02 engineering and technology, Integrated circuit design, low noise amplifiers, BiCMOS, Transistors, Noise figure, frequency 24 GHz, Low noise amplifier, integrated circuit design, NXP semiconductors, Microwave band, Frequency measurement, Hardware_INTEGRATEDCIRCUITS, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Inductors, Output impedance, S-parameters, size 0.25 mum, ComputingMilieux_MISCELLANEOUS, amplifier circuit demonstrator, Semiconductor device measurement, business.industry, Amplifier, matching networks, 020208 electrical & electronic engineering, Electrical engineering, BiCMOS analogue integrated circuits, 020206 networking & telecommunications, Low-noise amplifier, performance evaluation, [SPI.TRON]Engineering Sciences [physics]/Electronics, LNA circuit design, interconnect line parasitics, Integrated circuit modeling, bipolar MMIC, circuit simulation, Octagonal inductors, input impedance, BiCMOS mature technology, business, schematic circuit simulations, Interconnect lines

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d4583095bcf9ca657bcbca1bd42590bc
https://doi.org/10.1109/icecs.2014.7049994

المؤلفون: Jacques Verdier, Bruno Allard, Malal Bathily, Frederic Hasbani

المساهمون: Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), STMicroelectronics [Crolles] (ST-CROLLES)

المصدر: Proceedings of the 2009 IEEE Energy Conversion Congress and Exposition
ECCE
ECCE, Sep 2009, San José, CA, United States. pp.3876-3880, ⟨10.1109/ECCE.2009.5316115⟩

مصطلحات موضوعية: Engineering, driver circuits, Switched-mode power supply, Silicon, power MOSFET gate switching loss, chemistry.chemical_element, 02 engineering and technology, 7. Clean energy, BiCMOS integrated circuits, silicon integrated DC-DC converters, Robustness (computer science), resonant gate driver, 0202 electrical engineering, electronic engineering, information engineering, Gate driver, Hardware_INTEGRATEDCIRCUITS, power losses, BiCMOS technology, Power MOSFET, frequency 200 MHz, size 0.25 mum, power MOSFET, business.industry, power semiconductor switches, 020208 electrical & electronic engineering, silicon area impact, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Electrical engineering, silicon, DC-DC power convertors, Converters, Bicmos technology, 020202 computer hardware & architecture, resonant power convertors, chemistry, Si, elemental semiconductors, business, Voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::587f437c4f77fc142b13e639a1334342
https://hal.archives-ouvertes.fr/hal-00476272

المؤلفون: Piero Malcovati, Stefano D'Amico, A. Vigna, Andrea Baschirotto, N. Ghittori

المساهمون: Ghittori, N, Vigna, A, Malcovati, P, D'Amico, S, Baschirotto, A, N., Ghittori, A., Vigna, Piero, Malcovati, D'Amico, Stefano, Baschirotto, Andrea

المصدر: ICECS

مصطلحات موضوعية: Variable-gain amplifier, Engineering, transistor-level simulation, GSM, Low-power electronics, Hardware_INTEGRATEDCIRCUITS, Electronic engineering, UMTS, radiofrequency amplifier, size 0.25 mum, CMOS integrated circuit, reconfigurable wireless receiver, low-power electronic, Open-loop gain, radio receiver, Video Graphics Array, gain 0 dB to 35 dB, business.industry, current consumption, Electrical engineering, CMOS technology, frequency 15 MHz, Cutoff frequency, WLAN, CMOS, low-power variable gain amplifier design, frequency 5 MHz, c urrent 4.3 mA, business, voltage 2.5 V, UMTS frequency bands

وصف الملف: STAMPA

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::29ff103411dc4a45fe872059690e255a
https://doi.org/10.1109/icecs.2005.4633461

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المؤلفون: Barigelli, A., Walter Ciccognani, Colangeli, S., Colantonio, P., Feudale, M., Giannini, F., Giofre, R., Lanzieri, C., Limiti, E., Nanni, A., Pantellini, A., Romanini, P.

المصدر: Scopus-Elsevier

مصطلحات موضوعية: III-V semiconductors, high power amplifier, T/R module, low noise amplifiers, next generation spaceborne SAR, Settore ING-INF/01 - Elettronica, HEMT integrated circuits, spaceborne radar, GaN, MMIC amplifiers, gallium compounds, power amplifiers, synthetic aperture radar, wide band gap semiconductors, HEMT process, HPA, LNA MMIC solutions, next generation X-Band space SAR T/R module, noise characteristics, output power characteristics, power density, size 0.25 mum, synthetic aperture radars, Gain, Gallium nitride, Logic gates, MMICs, Noise, Power generation, Temperature measurement, GaN technology

URL الوصول: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::2d3f2614010edc339a95a0987ae96514
http://www.scopus.com/inward/record.url?eid=2-s2.0-84875923387&partnerID=MN8TOARS