المؤلفون: Liang, C., Li, Z., Liu, H., Jiang, Y.

المصدر: IEEE Transactions on Semiconductor Manufacturing IEEE Trans. Semicond. Manufact. Semiconductor Manufacturing, IEEE Transactions on. 37(3):405-409 Aug, 2024

المؤلفون: Xu, Chaoqi, Chen, Shuxian, Lin, Feng, Wu, Wangran, Zhu, Siyu, Yin, Liwei, Miao, Haisheng, Shao, Hong

المصدر: 2022 10th International Symposium on Next-Generation Electronics (ISNE) Next-Generation Electronics (ISNE), 2022 10th International Symposium on. :1-3 May, 2023

Relation: 2022 10th International Symposium on Next-Generation Electronics (ISNE)

المؤلفون: Wang, Y., Zhang, Q., Li, P., Su, X., Dong, L., Chen, R., Zhang, L., Gai, T., Su, Y., Wei, Y., Ye, T.C.

المصدر: IEEE Journal of the Electron Devices Society IEEE J. Electron Devices Soc. Electron Devices Society, IEEE Journal of the. 9:6-9 2021

المؤلفون: Kwon, Uihui, Min, Jeong-Guk, Lee, Seon-Young, Schmidt, Alexander, Kim, Dae Sin, Kayama, Yasuyuki, Nishizawa, Yutaka, Ishikawa, Kiyoshi

المصدر: 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2019 International Conference on. :1-4 Sep, 2019

Relation: 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

المؤلفون: Min, Jeong Guk, Jeong, Changwook, Kwon, Uihui, Kim, Dae Sin, Kim, Suhyun, Kim, Ilryoung, Yang, Joon-Sung

المصدر: 2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC) Nanotechnology Materials and Devices Conference (NMDC), 2018 IEEE 13th. :1-4 Oct, 2018

Relation: 2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC)

المؤلفون: Yu, B., Ma, K., Meng, F., Yeo, K.S., Shyam, P., Zhang, S., Verma, P.R.

المصدر: IEEE Transactions on Microwave Theory and Techniques IEEE Trans. Microwave Theory Techn. Microwave Theory and Techniques, IEEE Transactions on. 65(10):3937-3949 Oct, 2017

المؤلفون: Ying-Fei Wang, Qing-Chun Zhang, Ping Li, Xiao-Jing Su, Li-Song Dong, Rui Chen, Li-Bin Zhang, Tian-Yang Gai, Ya-Juan Su, Ya-Yi Wei, Tian Chun Ye

المصدر: IEEE Journal of the Electron Devices Society, Vol 9, Pp 6-9 (2021)

مصطلحات موضوعية: Layout proximity effects, high-k HfO₂, stress memorization technique, Al diffusion, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9235562/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/3269a09e61a045ebb74841b3612bc1ff

المؤلفون: Huang, Y.-T., Wu, S.-L., Chang, S.-J., Kuo, C.-W., Chen, Y.-T., Cheng, Y.-C., Cheng, O.

المصدر: IEEE Transactions on Nanotechnology IEEE Trans. Nanotechnology Nanotechnology, IEEE Transactions on. 10(5):1053-1058 Sep, 2011

المؤلفون: Flachowsky, S., Wei, A., Illgen, R., Herrmann, T., Höntschel, J., Horstmann, M., Klix, W., Stenzel, R.

المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 57(6):1343-1354 Jun, 2010

المؤلفون: Ortolland, C., Okuno, Y., Verheyen, P., Kerner, C., Stapelmann, C., Aoulaiche, M., Horiguchi, N., Hoffmann, T.

المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 56(8):1690-1697 Aug, 2009