المؤلفون: Guo, Z., He, Z., Wang, F., Wu, J., Yang, X., Fan, Z., Yang, F.

المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 69(8):4617-4623 Aug, 2022

المؤلفون: Thavamalar, B., Dhamodaran, M.

المصدر: 2016 International Conference on Advanced Communication Control and Computing Technologies (ICACCCT) Advanced Communication Control and Computing Technologies (ICACCCT), 2016 International Conference on. :290-293 May, 2016

Relation: 2016 International Conference on Advanced Communication Control and Computing Technologies (ICACCCT)

المؤلفون: Niu, Gang, Chien, Wei-Ting Kary, Zhang, Guan, Yu, Jianshu, Zhao, Xiaodong, Duan, Xiaobo

المصدر: 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the. :342-345 Jun, 2015

Relation: 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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المؤلفون: Kin P Cheung

المصدر: Power Electronic Devices and Components, Vol 4, Iss , Pp 100024- (2023)

مصطلحات موضوعية: Thick oxide, Extrinsic breakdown, Atomic hydrogen, Trap-assisted-tunneling, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2772370422000219; https://doaj.org/toc/2772-3704

URL الوصول: https://doaj.org/article/93de964f1126480a9a6bffc52a0db9ba

المؤلفون: Boukhayma, A., Peizerat, A., Enz, C.

المصدر: IEEE Journal of Solid-State Circuits IEEE J. Solid-State Circuits Solid-State Circuits, IEEE Journal of. 51(9):2180-2191 Sep, 2016

المؤلفون: Jiao, Guangfan, Baek, Sungkweon, Nam, Kab-jin, Chang, Sung-Il, Cho, Siyeon, Kauerauf, Thomas, Lee, Chanho, Han, Seung-Uk, Kim, Jin-Soak, Chung, Eun-Ae, Shin, Yoo-Cheol, Lim, Junhee, Shin, Yu-Gyun, Hwang, Kihyun

المصدر: 2017 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS),2017 IEEE International. :DG-6.1-DG-6.3 Apr, 2017

Relation: 2017 IEEE International Reliability Physics Symposium (IRPS)

المؤلفون: Zhang, Q., Chen, J., Sherony, M. J.

المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 58(12):4393-4397 Dec, 2011

المؤلفون: Joshi, R. V., Mukhopadhyay, S., Plass, D. W., Chan, Y. H., Chuang, C.-T., Tan, Y.

المصدر: IEEE Journal of Solid-State Circuits IEEE J. Solid-State Circuits Solid-State Circuits, IEEE Journal of. 44(3):965-976 Mar, 2009

المؤلفون: Varadharajaperumal, Muthubalan, Sirohi, Saurabh, Khandelwal, Sourabh, Tamilmani, Ethirajan, Subramanian, Vaidyananthan

المصدر: 2010 23rd International Conference on VLSI Design VLSI Design, 2010. VLSID '10. 23rd International Conference on. :212-217 Jan, 2010

Relation: 2010 23rd International Conference on VLSI Design: concurrently with the 9th International Conference on Embedded Systems Design (VLSID)