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1دورية أكاديمية
المؤلفون: Talukder, A.B.M.H., Smith, B., Akbulut, M., Dirisaglik, F., Silva, H., Gokirmak, A.
المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 69(8):4138-4143 Aug, 2022
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2دورية أكاديمية
المصدر: IEEE Transactions on Very Large Scale Integration (VLSI) Systems IEEE Trans. VLSI Syst. Very Large Scale Integration (VLSI) Systems, IEEE Transactions on. 30(5):676-680 May, 2022
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3دورية أكاديمية
المصدر: IEEE Open Journal of Nanotechnology IEEE Open J. Nanotechnol. Nanotechnology, IEEE Open Journal of. 2:72-77 2021
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4دورية أكاديمية
المؤلفون: Marques, G.C., Birla, A., Arnal, A., Dehm, S., Ramon, E., Tahoori, M.B., Aghassi-Hagmann, J.
المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 67(8):3146-3151 Aug, 2020
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5مؤتمر
المؤلفون: Jiao, Hailong, Kursun, Volkan
المصدر: 2nd Asia Symposium on Quality Electronic Design (ASQED) Quality Electronic Design (ASQED), 2010 2nd Asia Symposium on. :33-37 Aug, 2010
Relation: 2010 2nd Asia Symposium on Quality Electronic Design (ASQED 2010)
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6دورية أكاديمية
المؤلفون: Wen-Teng Chang, Meng-His Li, Chun-Hao Hsu, Wen-Chin Lin, Wen-Kuan Yeh
المصدر: IEEE Open Journal of Nanotechnology, Vol 2, Pp 72-77 (2021)
مصطلحات موضوعية: Work function metal, threshold voltage tuning, energy-dispersive X-ray spectroscopy, FinFETs, reliability, Chemical technology, TP1-1185, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
وصف الملف: electronic resource
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7دورية أكاديمية
المؤلفون: Chen, G., Sylvester, D., Blaauw, D., Mudge, T.
المصدر: IEEE Transactions on Very Large Scale Integration (VLSI) Systems IEEE Trans. VLSI Syst. Very Large Scale Integration (VLSI) Systems, IEEE Transactions on. 18(11):1590-1598 Nov, 2010
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8
المؤلفون: Meng-His Li, Wen-Kuan Yeh, Wen-Teng Chang, Wen-Chin Lin, Chun-Hao Hsu
المصدر: IEEE Open Journal of Nanotechnology, Vol 2, Pp 72-77 (2021)
مصطلحات موضوعية: FinFETs, Materials science, TP1-1185, Hardware_PERFORMANCEANDRELIABILITY, law.invention, Hardware_GENERAL, law, Hardware_INTEGRATEDCIRCUITS, Metal gate, Leakage (electronics), Hot-carrier injection, reliability, threshold voltage tuning, business.industry, Chemical technology, Transistor, Work function metal, TK1-9971, Threshold voltage, CMOS, Logic gate, Optoelectronics, Electrical engineering. Electronics. Nuclear engineering, energy-dispersive X-ray spectroscopy, business, Hardware_LOGICDESIGN, Voltage
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9دورية أكاديمية
المؤلفون: Vuttipittayamongkol, Pattaramon, Wu, Fanqi, Chen, Haitian, Cao, Xuan, Liu, Bilu, Zhou, Chongwu
المصدر: Nano Research. April 2015 8(4):1159-1168
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10دورية أكاديمية
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