المؤلفون: Talukder, A.B.M.H., Smith, B., Akbulut, M., Dirisaglik, F., Silva, H., Gokirmak, A.

المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 69(8):4138-4143 Aug, 2022

المؤلفون: Chen, Y., Nie, Y., Jiao, H.

المصدر: IEEE Transactions on Very Large Scale Integration (VLSI) Systems IEEE Trans. VLSI Syst. Very Large Scale Integration (VLSI) Systems, IEEE Transactions on. 30(5):676-680 May, 2022

المؤلفون: Chang, W., Li, M., Hsu, C., Lin, W., Yeh, W.

المصدر: IEEE Open Journal of Nanotechnology IEEE Open J. Nanotechnol. Nanotechnology, IEEE Open Journal of. 2:72-77 2021

المؤلفون: Marques, G.C., Birla, A., Arnal, A., Dehm, S., Ramon, E., Tahoori, M.B., Aghassi-Hagmann, J.

المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 67(8):3146-3151 Aug, 2020

المؤلفون: Jiao, Hailong, Kursun, Volkan

المصدر: 2nd Asia Symposium on Quality Electronic Design (ASQED) Quality Electronic Design (ASQED), 2010 2nd Asia Symposium on. :33-37 Aug, 2010

Relation: 2010 2nd Asia Symposium on Quality Electronic Design (ASQED 2010)

المؤلفون: Wen-Teng Chang, Meng-His Li, Chun-Hao Hsu, Wen-Chin Lin, Wen-Kuan Yeh

المصدر: IEEE Open Journal of Nanotechnology, Vol 2, Pp 72-77 (2021)

مصطلحات موضوعية: Work function metal, threshold voltage tuning, energy-dispersive X-ray spectroscopy, FinFETs, reliability, Chemical technology, TP1-1185, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9528922/; https://doaj.org/toc/2644-1292

URL الوصول: https://doaj.org/article/1891743a4eaa498f96f6e993d8118506

المؤلفون: Chen, G., Sylvester, D., Blaauw, D., Mudge, T.

المصدر: IEEE Transactions on Very Large Scale Integration (VLSI) Systems IEEE Trans. VLSI Syst. Very Large Scale Integration (VLSI) Systems, IEEE Transactions on. 18(11):1590-1598 Nov, 2010

المؤلفون: Meng-His Li, Wen-Kuan Yeh, Wen-Teng Chang, Wen-Chin Lin, Chun-Hao Hsu

المصدر: IEEE Open Journal of Nanotechnology, Vol 2, Pp 72-77 (2021)

مصطلحات موضوعية: FinFETs, Materials science, TP1-1185, Hardware_PERFORMANCEANDRELIABILITY, law.invention, Hardware_GENERAL, law, Hardware_INTEGRATEDCIRCUITS, Metal gate, Leakage (electronics), Hot-carrier injection, reliability, threshold voltage tuning, business.industry, Chemical technology, Transistor, Work function metal, TK1-9971, Threshold voltage, CMOS, Logic gate, Optoelectronics, Electrical engineering. Electronics. Nuclear engineering, energy-dispersive X-ray spectroscopy, business, Hardware_LOGICDESIGN, Voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ce8ce39055c10499cacaa53095c97db7
https://doi.org/10.1109/ojnano.2021.3109897

المؤلفون: Vuttipittayamongkol, Pattaramon, Wu, Fanqi, Chen, Haitian, Cao, Xuan, Liu, Bilu, Zhou, Chongwu

المصدر: Nano Research. April 2015 8(4):1159-1168

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