المؤلفون: Nidhi, K., Ker, M., Lee, J., Huang, S.

المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 66(7):3040-3048 Jul, 2019

المؤلفون: V. P. Babenko, V. K. Bityukov, V. V. Kuznetsov, D. S. Simachkov

المصدر: Российский технологический журнал, Vol 6, Iss 1, Pp 20-39 (2018)

مصطلحات موضوعية: mosfet-ключ, simulation, static loss, dynamic loss, mosfet key, open transistor channel resistance, input capacitance, miller effect, switching losses, circuit simulation, driver, total gate charge, switch on time, switch off time, Information theory, Q350-390

وصف الملف: electronic resource

Relation: https://www.rtj-mirea.ru/jour/article/view/98; https://doaj.org/toc/2500-316X

URL الوصول: https://doaj.org/article/ab0632fff41e42169f254cffd21d3d25