يعرض 1 - 10 نتائج من 816 نتيجة بحث عن '"underlap"', وقت الاستعلام: 1.60s تنقيح النتائج
  1. 1
    مؤتمر
    Analysis of Source-and-Drain Doping for the Underlapped FinFET

    المؤلفون: Rathore, Rituraj S., Srivastava, Viranjay M.

    المصدر: 2024 IEEE International Conference on Omni-layer Intelligent Systems (COINS) Omni-layer Intelligent Systems (COINS), 2024 IEEE International Conference on. :1-5 Jul, 2024

    Relation: 2024 IEEE International Conference on Omni-layer Intelligent Systems (COINS)

    أضف إلى المفضلة
  2. 2
    مؤتمر
    A Comparative Study on the Effect of Dielectric Gate Materials on Analog and RF Performance of a Symmetrical Underlap DG Si/SiGe-based MOS-HEMT Device

    المؤلفون: Kala, Mausiki, Chakraborty, Chirayush, Kashyap, Ayush, Bordoloi, Ritvik, Kundu, Atanu

    المصدر: 2024 5th International Conference on Recent Trends in Computer Science and Technology (ICRTCST) Recent Trends in Computer Science and Technology (ICRTCST), 2024 5th International Conference on. :625-629 Apr, 2024

    Relation: 2024 5th International Conference on Recent Trends in Computer Science and Technology (ICRTCST)

    أضف إلى المفضلة
  3. 3
    مؤتمر
    Influence of Device Length on Analog Performances of a Normally-Off Underlapped AlGaN/GaN-based Double Gate MOS-HEMT Device

    المؤلفون: Chakraborty, Chirayush, Kundu, Atanu

    المصدر: 2024 5th International Conference on Recent Trends in Computer Science and Technology (ICRTCST) Recent Trends in Computer Science and Technology (ICRTCST), 2024 5th International Conference on. :570-572 Apr, 2024

    Relation: 2024 5th International Conference on Recent Trends in Computer Science and Technology (ICRTCST)

    أضف إلى المفضلة
  4. 4
    دورية أكاديمية
    Impact of Process-Induced Inclined Side-Walls on Gate Leakage Current of Nanowire GAA MOSFETs

    المؤلفون: Maniyar, A., Raj, P., Srinivas, P.S.T.N., Kumar, A., Chang-Liao, K., Tiwari, P.K.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(3):2196-2202 Mar, 2024

    Full Text Finder
    أضف إلى المفضلة
  5. 5
    مؤتمر
    Influence of Buffer Length and Mole Fraction on Analog Performances of a Symmetrical Underlapped DG Si/SiGe-based MOS-HEMT Device

    المؤلفون: Kashyap, Ayush, Roy, Shriyans, Ghosh, Rohan, Khan, Faisal Ahmed, Kundu, Atanu

    المصدر: 2024 IEEE 3rd International Conference on Control, Instrumentation, Energy & Communication (CIEC) Control, Instrumentation, Energy & Communication (CIEC), 2024 IEEE 3rd International Conference on. :325-330 Jan, 2024

    Relation: 2024 IEEE 3rd International Conference on Control, Instrumentation, Energy & Communication (CIEC)

    أضف إلى المفضلة
  6. 6
    مؤتمر
    Analytical Comparison of Analog/RF Performance of DG InAlGaN/GaN based MOS-HEMTsfor GaN width variation

    المؤلفون: Sorkhel, Kathakoli, Ghosh, Atig, Mukherjee, Hrit, Chatterjee, Soumyo, Kar, Mousiki, Kundu, Atanu

    المصدر: 2023 IEEE 2nd International Conference on Industrial Electronics: Developments & Applications (ICIDeA) Industrial Electronics: Developments & Applications (ICIDeA), 2023 IEEE 2nd International Conference on. :54-59 Sep, 2023

    Relation: 2023 IEEE 2nd International Conference on Industrial Electronics: Developments & Applications (ICIDeA)

    أضف إلى المفضلة
  7. 7
    مؤتمر
    Influence of Introducing Symmetric Underlap on Analog Performance of Dual Gate AlGaN/GaN MOS-HEMT

    المؤلفون: Banerjee, Amrita, Mitra, Rajrup, Roy, Akash, Kundu, Atanu, Kar, Mousiki, Chatterjee, Soumyo

    المصدر: 2023 IEEE 2nd International Conference on Industrial Electronics: Developments & Applications (ICIDeA) Industrial Electronics: Developments & Applications (ICIDeA), 2023 IEEE 2nd International Conference on. :60-63 Sep, 2023

    Relation: 2023 IEEE 2nd International Conference on Industrial Electronics: Developments & Applications (ICIDeA)

    أضف إلى المفضلة
  8. 8
    مؤتمر
    Impact of Underlap/Overlap on Source Engineered Tunnel FET

    المؤلفون: Shakya, Arzoo, Mishra, Adarsh Kumar, Bhadauria, Tanvi, Singh, Avtar, Kaur, Amandeep

    المصدر: 2023 1st International Conference on Circuits, Power and Intelligent Systems (CCPIS) Circuits, Power and Intelligent Systems (CCPIS), 2023 1st International Conference on. :01-04 Sep, 2023

    Relation: 2023 1st International Conference on Circuits, Power and Intelligent Systems (CCPIS)

    أضف إلى المفضلة
  9. 9
    دورية أكاديمية
    Vertical Double Gate Si-Ge Heterojunction Dopingless TFET Based on Charge Plasma Concept for Enhanced Analog Performance

    المؤلفون: Gupta, GauravAff1, IDs12633024031118_cor1, Rai, Sanjeev

    المصدر: Silicon. :1-13

    Find this article in full text from Springer Verlag. Full Text Finder
    أضف إلى المفضلة
  10. 10
    مؤتمر
    Analytical Modeling of Asymmetric Junctionless Dual Material Double Gate MOSFET with Underlap for Enhanced Hot Carrier Reliability

    المؤلفون: Basak, Arighna, Deyasi, Arpan, Sarkar, Angsuman

    المصدر: 2023 IEEE Devices for Integrated Circuit (DevIC) Devices for Integrated Circuit (DevIC), 2023 IEEE. :516-521 Apr, 2023

    Relation: 2023 IEEE Devices for Integrated Circuit (DevIC)

    أضف إلى المفضلة
أدوات البحث: أحصل على تغذية RSS – أرسل هذا البحث بالبريد الإلكتروني – حفظ البحث – جدول التنبيهات: لا شيء