دورية أكاديمية
Band Gap Opening Induced by the Structural Periodicity in Epitaxial Graphene Buffer Layer.
| العنوان: | Band Gap Opening Induced by the Structural Periodicity in Epitaxial Graphene Buffer Layer. |
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| المؤلفون: | N Nair M; UR1 CNRS/Synchrotron SOLEIL, Saint-Aubin, 91192 Gif sur Yvette, France.; Laboratoire de Physique des Solides, CNRS, Univ. Paris-Sud, Université Paris-Saclay, Bât. 510 , F-91405 Orsay Cedex, France., Palacio I; UR1 CNRS/Synchrotron SOLEIL, Saint-Aubin, 91192 Gif sur Yvette, France., Celis A; Laboratoire de Physique des Solides, CNRS, Univ. Paris-Sud, Université Paris-Saclay, Bât. 510 , F-91405 Orsay Cedex, France.; Synchrotron SOLEIL, L'Orme des Merisiers , Saint-Aubin, 91192 Gif sur Yvette, France., Zobelli A; Laboratoire de Physique des Solides, CNRS, Univ. Paris-Sud, Université Paris-Saclay, Bât. 510 , F-91405 Orsay Cedex, France., Gloter A; Laboratoire de Physique des Solides, CNRS, Univ. Paris-Sud, Université Paris-Saclay, Bât. 510 , F-91405 Orsay Cedex, France., Kubsky S; Synchrotron SOLEIL, L'Orme des Merisiers , Saint-Aubin, 91192 Gif sur Yvette, France., Turmaud JP; School of Physics, The Georgia Institute of Technology , Atlanta, Georgia 30332-0430, United States., Conrad M; School of Physics, The Georgia Institute of Technology , Atlanta, Georgia 30332-0430, United States., Berger C; School of Physics, The Georgia Institute of Technology , Atlanta, Georgia 30332-0430, United States.; CNRS/Institut Neél, BP166 , 38042 Grenoble, France., de Heer W; School of Physics, The Georgia Institute of Technology , Atlanta, Georgia 30332-0430, United States., Conrad EH; School of Physics, The Georgia Institute of Technology , Atlanta, Georgia 30332-0430, United States., Taleb-Ibrahimi A; UR1 CNRS/Synchrotron SOLEIL, Saint-Aubin, 91192 Gif sur Yvette, France., Tejeda A; Laboratoire de Physique des Solides, CNRS, Univ. Paris-Sud, Université Paris-Saclay, Bât. 510 , F-91405 Orsay Cedex, France.; Synchrotron SOLEIL, L'Orme des Merisiers , Saint-Aubin, 91192 Gif sur Yvette, France. |
| المصدر: | Nano letters [Nano Lett] 2017 Apr 12; Vol. 17 (4), pp. 2681-2689. Date of Electronic Publication: 2017 Mar 30. |
| نوع المنشور: | Journal Article; Research Support, Non-U.S. Gov't; Research Support, U.S. Gov't, Non-P.H.S. |
| اللغة: | English |
| بيانات الدورية: | Publisher: American Chemical Society Country of Publication: United States NLM ID: 101088070 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1530-6992 (Electronic) Linking ISSN: 15306984 NLM ISO Abbreviation: Nano Lett Subsets: PubMed not MEDLINE |
| أسماء مطبوعة: | Original Publication: Washington, DC : American Chemical Society, c2001- |
| مستخلص: | The epitaxial graphene buffer layer on the Si face of hexagonal SiC shows a promising band gap, of which the precise origin remains to be understood. In this work, we correlate the electronic to the atomic structure of the buffer layer by combining angle resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy (STM), and high-resolution scanning transmission electron microscopy (HR-STEM). We show that the band structure in the buffer has an electronic periodicity related to the structural periodicity observed in STM images and published X-ray diffraction. Our HR-STEM measurements show the bonding of the buffer layer to the SiC at specific locations separated by 1.5 nm. This is consistent with the quasi 6 × 6 periodic corrugation observed in the STM images. The distance between buffer C and SiC is 1.9 Å in the bonded regions and up to 2.8 Å in the decoupled regions, corresponding to a 0.9 Å corrugation of the buffer layer. The decoupled regions are sp 2 hybridized. Density functional tight binding (DFTB) calculations demonstrate the presence of a gap at the Dirac point everywhere in the buffer layer, even in the decoupled regions where the buffer layer has an atomic structure close to that of graphene. The surface periodicity also promotes band in the superperiodic Brillouin zone edges as seen by photoemission and confirmed by our calculations. |
| فهرسة مساهمة: | Keywords: ARPES; Band gap; graphene buffer layer; nanostructuration |
| تواريخ الأحداث: | Date Created: 20170328 Date Completed: 20180919 Latest Revision: 20201001 |
| رمز التحديث: | 20240829 |
| DOI: | 10.1021/acs.nanolett.7b00509 |
| PMID: | 28345926 |
| قاعدة البيانات: | MEDLINE |
Find this issue from the American Chemical Society | تدمد: | 1530-6992 |
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| DOI: | 10.1021/acs.nanolett.7b00509 |