| المؤلفون: |
Bartmann MG; Institute of Solid State Electronics, Technische Universität Wien, Gußhausstraße 25-25a, A-1040 Vienna, Austria., Sistani M; Institute of Solid State Electronics, Technische Universität Wien, Gußhausstraße 25-25a, A-1040 Vienna, Austria., Glassner S; Institute of Solid State Electronics, Technische Universität Wien, Gußhausstraße 25-25a, A-1040 Vienna, Austria., Salem B; Univ. Grenoble Alpes, CNRS, CEA/Leti Minatec, Grenoble INP, LTM, F-38054 Grenoble, France., Baron T; Univ. Grenoble Alpes, CNRS, CEA/Leti Minatec, Grenoble INP, LTM, F-38054 Grenoble, France., Gentile P; Univ. Grenoble Alpes, CEA, IRIG- PHELIQS, F-38054 Grenoble, France., Smoliner J; Institute of Solid State Electronics, Technische Universität Wien, Gußhausstraße 25-25a, A-1040 Vienna, Austria., Lugstein A; Institute of Solid State Electronics, Technische Universität Wien, Gußhausstraße 25-25a, A-1040 Vienna, Austria. |
| مستخلص: |
Group-IV based light sources are one of the missing links towards fully CMOS compatible photonic circuits. Combining both silicon process compatibility and a pseudo-direct band gap, germanium is one of the most viable candidates. To overcome the limitation of the indirect band gap and turning germanium in an efficient light emitting material, the application of strain has been proven as a promising approach. So far the experimental verification of strain induced bandgap modifications were based on optical measurements and restricted to moderate strain levels. In this work, we demonstrate a methodology enabling to apply tunable tensile strain to intrinsic germanium [Formula: see text] nanowires and simultaneously perform in situ optical as well as electrical characterization. Combining I/V measurements and μ-Raman spectroscopy at various strain levels, we determined a decrease of the resistivity by almost three orders of magnitude for strain levels of ∼5%. Thereof, we calculated the strain induced band gap narrowing in remarkable accordance to recently published simulation results for moderate strain levels up to 3.6%. Deviations for ultrahigh strain values are discussed with respect to surface reconfiguration and reduced charge carrier scattering time. |
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