دورية أكاديمية

The role of chalcogen vacancies for atomic defect emission in MoS 2 .

التفاصيل البيبلوغرافية
العنوان: The role of chalcogen vacancies for atomic defect emission in MoS 2 .
المؤلفون: Mitterreiter E; Walter Schottky Institut and Physics Department, Technical University of Munich, Garching, Germany.; Munich Center for Quantum Science and Technology (MCQST), München, Germany., Schuler B; Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.; nanotech@surfaces Laboratory, Empa - Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, Switzerland., Micevic A; Walter Schottky Institut and Physics Department, Technical University of Munich, Garching, Germany.; Munich Center for Quantum Science and Technology (MCQST), München, Germany., Hernangómez-Pérez D; Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovot, Israel., Barthelmi K; Walter Schottky Institut and Physics Department, Technical University of Munich, Garching, Germany.; Munich Center for Quantum Science and Technology (MCQST), München, Germany., Cochrane KA; Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA., Kiemle J; Walter Schottky Institut and Physics Department, Technical University of Munich, Garching, Germany.; Munich Center for Quantum Science and Technology (MCQST), München, Germany., Sigger F; Walter Schottky Institut and Physics Department, Technical University of Munich, Garching, Germany.; Munich Center for Quantum Science and Technology (MCQST), München, Germany., Klein J; Walter Schottky Institut and Physics Department, Technical University of Munich, Garching, Germany.; Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Wong E; Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA., Barnard ES; Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA., Watanabe K; Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan., Taniguchi T; International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan., Lorke M; Bremen Center for Computational Materials Science, University of Bremen, Bremen, Germany.; Bremen Institute for Theoretical Physics, University of Bremen, Bremen, Germany., Jahnke F; Bremen Institute for Theoretical Physics, University of Bremen, Bremen, Germany., Finley JJ; Walter Schottky Institut and Physics Department, Technical University of Munich, Garching, Germany.; Munich Center for Quantum Science and Technology (MCQST), München, Germany., Schwartzberg AM; Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA., Qiu DY; Department of Mechanical Engineering and Materials Science, Yale University, New Haven, CT, USA., Refaely-Abramson S; Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovot, Israel., Holleitner AW; Walter Schottky Institut and Physics Department, Technical University of Munich, Garching, Germany. holleitner@wsi.tum.de.; Munich Center for Quantum Science and Technology (MCQST), München, Germany. holleitner@wsi.tum.de., Weber-Bargioni A; Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA. afweber-bargioni@lbl.gov., Kastl C; Walter Schottky Institut and Physics Department, Technical University of Munich, Garching, Germany. christoph.kastl@wsi.tum.de.; Munich Center for Quantum Science and Technology (MCQST), München, Germany. christoph.kastl@wsi.tum.de.
المصدر: Nature communications [Nat Commun] 2021 Jun 22; Vol. 12 (1), pp. 3822. Date of Electronic Publication: 2021 Jun 22.
نوع المنشور: Journal Article
اللغة: English
بيانات الدورية: Publisher: Nature Pub. Group Country of Publication: England NLM ID: 101528555 Publication Model: Electronic Cited Medium: Internet ISSN: 2041-1723 (Electronic) Linking ISSN: 20411723 NLM ISO Abbreviation: Nat Commun Subsets: PubMed not MEDLINE; MEDLINE
أسماء مطبوعة: Original Publication: [London] : Nature Pub. Group
مستخلص: For two-dimensional (2D) layered semiconductors, control over atomic defects and understanding of their electronic and optical functionality represent major challenges towards developing a mature semiconductor technology using such materials. Here, we correlate generation, optical spectroscopy, atomic resolution imaging, and ab initio theory of chalcogen vacancies in monolayer MoS 2 . Chalcogen vacancies are selectively generated by in-vacuo annealing, but also focused ion beam exposure. The defect generation rate, atomic imaging and the optical signatures support this claim. We discriminate the narrow linewidth photoluminescence signatures of vacancies, resulting predominantly from localized defect orbitals, from broad luminescence features in the same spectral range, resulting from adsorbates. Vacancies can be patterned with a precision below 10 nm by ion beams, show single photon emission, and open the possibility for advanced defect engineering of 2D semiconductors at the ultimate scale.
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معلومات مُعتمدة: EXC 2089/1-390776260 Deutsche Forschungsgemeinschaft (German Research Foundation); RTG 2247 Deutsche Forschungsgemeinschaft (German Research Foundation); RTG 2247 Deutsche Forschungsgemeinschaft (German Research Foundation); DE-AC02-05CH11231 DOE | Office of Science (SC); DE-AC02-05CH11231 DOE | Office of Science (SC); DE-AC02-05CH11231 DOE | Office of Science (SC); DE-AC02-05CH11231 DOE | Office of Science (SC); JPMJCR15F3 MEXT | JST | Core Research for Evolutional Science and Technology (CREST); JPMJCR15F3 MEXT | JST | Core Research for Evolutional Science and Technology (CREST); JPMXP0112101001 Ministry of Education, Culture, Sports, Science and Technology (MEXT); JP20H00354 Ministry of Education, Culture, Sports, Science and Technology (MEXT); JPMXP0112101001 Ministry of Education, Culture, Sports, Science and Technology (MEXT)
تواريخ الأحداث: Date Created: 20210623 Latest Revision: 20240402
رمز التحديث: 20240402
مُعرف محوري في PubMed: PMC8219741
DOI: 10.1038/s41467-021-24102-y
PMID: 34158488
قاعدة البيانات: MEDLINE