Synthesis of high quality 2D carbide MXene flakes using a highly purified MAX precursor for ink applications.

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العنوان:	Synthesis of high quality 2D carbide MXene flakes using a highly purified MAX precursor for ink applications.
المؤلفون:	Seok SH; Department of Materials Science and Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Korea hgchae@unist.ac.kr jsson@unist.ac.kr sykwon@unist.ac.kr., Choo S; Department of Materials Science and Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Korea hgchae@unist.ac.kr jsson@unist.ac.kr sykwon@unist.ac.kr., Kwak J; Department of Materials Science and Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Korea hgchae@unist.ac.kr jsson@unist.ac.kr sykwon@unist.ac.kr., Ju H; Department of Materials Science and Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Korea hgchae@unist.ac.kr jsson@unist.ac.kr sykwon@unist.ac.kr., Han JH; Department of Materials Science and Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Korea hgchae@unist.ac.kr jsson@unist.ac.kr sykwon@unist.ac.kr., Kang WS; Department of Materials Science and Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Korea hgchae@unist.ac.kr jsson@unist.ac.kr sykwon@unist.ac.kr., Lee J; Composites Research Division, Korea Institute of Materials Science (KIMS) Changwon 51508 Korea., Kim SY; Department of Materials Science and Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Korea hgchae@unist.ac.kr jsson@unist.ac.kr sykwon@unist.ac.kr., Lee DH; Department of Materials Science and Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Korea hgchae@unist.ac.kr jsson@unist.ac.kr sykwon@unist.ac.kr., Lee J; Department of Materials Science and Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Korea hgchae@unist.ac.kr jsson@unist.ac.kr sykwon@unist.ac.kr., Wang J; Department of Materials Science and Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Korea hgchae@unist.ac.kr jsson@unist.ac.kr sykwon@unist.ac.kr., Song S; Department of Materials Science and Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Korea hgchae@unist.ac.kr jsson@unist.ac.kr sykwon@unist.ac.kr., Jo W; Department of Materials Science and Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Korea hgchae@unist.ac.kr jsson@unist.ac.kr sykwon@unist.ac.kr., Jung BM; Composites Research Division, Korea Institute of Materials Science (KIMS) Changwon 51508 Korea., Chae HG; Department of Materials Science and Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Korea hgchae@unist.ac.kr jsson@unist.ac.kr sykwon@unist.ac.kr., Son JS; Department of Materials Science and Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Korea hgchae@unist.ac.kr jsson@unist.ac.kr sykwon@unist.ac.kr., Kwon SY; Department of Materials Science and Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Korea hgchae@unist.ac.kr jsson@unist.ac.kr sykwon@unist.ac.kr.
المصدر:	Nanoscale advances [Nanoscale Adv] 2020 Nov 23; Vol. 3 (2), pp. 517-527. Date of Electronic Publication: 2020 Nov 23 (Print Publication: 2021).
نوع المنشور:	Journal Article
اللغة:	English
بيانات الدورية:	Publisher: Royal Society of Chemistry Country of Publication: England NLM ID: 101738708 Publication Model: eCollection Cited Medium: Internet ISSN: 2516-0230 (Electronic) Linking ISSN: 25160230 NLM ISO Abbreviation: Nanoscale Adv Subsets: PubMed not MEDLINE
أسماء مطبوعة:	Original Publication: Cambridge : Royal Society of Chemistry, [2019]-
مستخلص:	The practical application of 2D MXenes in electronic and energy fields has been hindered by the severe variation in the quality of MXene products depending on the parent MAX phases, manufacturing techniques, and preparation parameters. In particular, their synthesis has been impeded by the lack of studies reporting the synthesis of high-quality parent MAX phases. In addition, controllable and uniform deposition of 2D MXenes on various large-scale substrates is urgently required to use them practically. Herein, a method of pelletizing raw materials could synthesize a stoichiometric Ti 3 AlC 2 MAX phase with high yield and processability, and fewer impurities. The Ti 3 AlC 2 could be exfoliated into 1-2-atom-thick 2D Ti 3 C 2 T x flakes, and their applicability was confirmed by the deposition and additional alignment of the 2D flakes with tunable thickness and electrical properties. Moreover, a practical MXene ink was fabricated with rheological characterization. MXene ink exhibited much better thickness uniformity while retaining excellent electrical performances ( e.g. , sheet resistance, electromagnetic interference shielding ability) as those of a film produced by vacuum filtration. The direct functional integration of MXenes on various substrates is expected to initiate new and unexpected MXene-based applications. Competing Interests: The authors declare no conflict of interest. (This journal is © The Royal Society of Chemistry.)
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تواريخ الأحداث:	Date Created: 20220922 Latest Revision: 20220924
رمز التحديث:	20221213
مُعرف محوري في PubMed:	PMC9417611
DOI:	10.1039/d0na00398k
PMID:	36131735
قاعدة البيانات:	MEDLINE

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تدمد:	2516-0230
DOI:	10.1039/d0na00398k