دورية أكاديمية

Novel Mechanism-Based Descriptors for Extreme Ultraviolet-Induced Photoacid Generation: Key Factors Affecting Extreme Ultraviolet Sensitivity.

التفاصيل البيبلوغرافية
العنوان: Novel Mechanism-Based Descriptors for Extreme Ultraviolet-Induced Photoacid Generation: Key Factors Affecting Extreme Ultraviolet Sensitivity.
المؤلفون: Park JY; Innovation Center, Samsung Electronics, Samsungjeonja-ro 1, Hwaseong-si 18448, Republic of Korea.; Semiconductor R&D Center, Samsung Electronics, Samsungjeonja-ro 1, Hwaseong-si 18448, Republic of Korea., Song HJ; Semiconductor R&D Center, Samsung Electronics, Samsungjeonja-ro 1, Hwaseong-si 18448, Republic of Korea., Nguyen TC; Innovation Center, Samsung Electronics, Samsungjeonja-ro 1, Hwaseong-si 18448, Republic of Korea., Son WJ; Innovation Center, Samsung Electronics, Samsungjeonja-ro 1, Hwaseong-si 18448, Republic of Korea., Kim D; Innovation Center, Samsung Electronics, Samsungjeonja-ro 1, Hwaseong-si 18448, Republic of Korea., Song G; Semiconductor R&D Center, Samsung Electronics, Samsungjeonja-ro 1, Hwaseong-si 18448, Republic of Korea., Hong SK; Semiconductor R&D Center, Samsung Electronics, Samsungjeonja-ro 1, Hwaseong-si 18448, Republic of Korea., Go H; Semiconductor R&D Center, Samsung Electronics, Samsungjeonja-ro 1, Hwaseong-si 18448, Republic of Korea., Park C; Semiconductor R&D Center, Samsung Electronics, Samsungjeonja-ro 1, Hwaseong-si 18448, Republic of Korea., Jang I; Innovation Center, Samsung Electronics, Samsungjeonja-ro 1, Hwaseong-si 18448, Republic of Korea., Kim DS; Innovation Center, Samsung Electronics, Samsungjeonja-ro 1, Hwaseong-si 18448, Republic of Korea.
المصدر: Molecules (Basel, Switzerland) [Molecules] 2023 Aug 25; Vol. 28 (17). Date of Electronic Publication: 2023 Aug 25.
نوع المنشور: Journal Article
اللغة: English
بيانات الدورية: Publisher: MDPI Country of Publication: Switzerland NLM ID: 100964009 Publication Model: Electronic Cited Medium: Internet ISSN: 1420-3049 (Electronic) Linking ISSN: 14203049 NLM ISO Abbreviation: Molecules Subsets: PubMed not MEDLINE; MEDLINE
أسماء مطبوعة: Original Publication: Basel, Switzerland : MDPI, c1995-
مستخلص: Predicting photolithography performance in silico for a given materials combination is essential for developing better patterning processes. However, it is still an extremely daunting task because of the entangled chemistry with multiple reactions among many material components. Herein, we investigated the EUV-induced photochemical reaction mechanism of a model photoacid generator (PAG), triphenylsulfonium cation, using atomiC-Scale materials modeling to elucidate that the acid generation yield strongly depends on two main factors: the lowest unoccupied molecular orbital (LUMO) of PAG cation associated with the electron-trap efficiency 'before C-S bond dissociation' and the overall oxidation energy change of rearranged PAG associated with the proton-generation efficiency 'after C-S bond dissociation'. Furthermore, by considering stepwise reactions accordingly, we developed a two-parameter-based prediction model predicting the exposure dose of the resist, which outperformed the traditional LUMO-based prediction model. Our model suggests that one should not focus only on the LUMO energies but also on the energy change during the rearrangement process of the activated triphenylsulfonium (TPS) species. We also believe that the model is well suited for computational materials screening and/or inverse design of novel PAG materials with high lithographic performances.
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فهرسة مساهمة: Keywords: acid-generation mechanism; chemical amplified resist (CAR); extreme ultraviolet (EUV) photoresist; photoacid generator (PAG); triphenylsulfonium (TPS)
تواريخ الأحداث: Date Created: 20230909 Latest Revision: 20230911
رمز التحديث: 20231215
مُعرف محوري في PubMed: PMC10488646
DOI: 10.3390/molecules28176244
PMID: 37687074
قاعدة البيانات: MEDLINE
الوصف
تدمد:1420-3049
DOI:10.3390/molecules28176244