دورية أكاديمية
Physical reservoirs based on MoS 2 -HZO integrated ferroelectric field-effect transistors for reservoir computing systems.
العنوان: | Physical reservoirs based on MoS |
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المؤلفون: | Li L; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583. eleakw@nus.edu.sg., Xiang H; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583. eleakw@nus.edu.sg., Zheng H; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583. eleakw@nus.edu.sg., Chien YC; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583. eleakw@nus.edu.sg., Duong NT; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583. eleakw@nus.edu.sg., Gao J; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583. eleakw@nus.edu.sg., Ang KW; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583. eleakw@nus.edu.sg. |
المصدر: | Nanoscale horizons [Nanoscale Horiz] 2024 Apr 29; Vol. 9 (5), pp. 752-763. Date of Electronic Publication: 2024 Apr 29. |
نوع المنشور: | Journal Article |
اللغة: | English |
بيانات الدورية: | Publisher: Royal Society of Chemistry Country of Publication: England NLM ID: 101712576 Publication Model: Electronic Cited Medium: Internet ISSN: 2055-6764 (Electronic) Linking ISSN: 20556756 NLM ISO Abbreviation: Nanoscale Horiz Subsets: PubMed not MEDLINE; MEDLINE |
أسماء مطبوعة: | Original Publication: [Cambridge, England] : Royal Society of Chemistry, [2016]- |
مستخلص: | Reservoir computing (RC), a variant of recurrent neural networks (RNNs), is well-known for its reduced energy consumption through exclusive focus on training the output weight and its superior performance in handling spatiotemporal information. Implementing these networks in hardware requires devices with superior fading memory behavior. Unlike filament-based two-terminal devices, those relying on ferroelectric switching demonstrate improved voltage reliability, while three-terminal transistors provide additional active control. HfO |
تواريخ الأحداث: | Date Created: 20240311 Latest Revision: 20240429 |
رمز التحديث: | 20240429 |
DOI: | 10.1039/d3nh00524k |
PMID: | 38465422 |
قاعدة البيانات: | MEDLINE |
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