التفاصيل البيبلوغرافية
| العنوان: |
Ambipolar operation of fullerene field-effect transistors by semiconductor/ metal interface modification. |
| المؤلفون: |
Takao Nishikawa, Shin-Ichiro Kobayashi, Tomoyuki Nakanowatari, Tadaoki Mitani, Tatsuya Shimoda, Yoshihiro Kubozono, Gakushi Yamamoto, Hisao Ishii, Michio Niwano, Yoshihiro Iwasa |
| المصدر: |
Journal of Applied Physics; 5/15/2005, Vol. 97 Issue 10, p104509-1-104509-5, 5p, 1 Diagram, 2 Graphs |
| مستخلص: |
We report an ambipolar operation in field-effect transistors of C60 and metallofullerene Dy@C82 by modification of semiconductor/metal electrode interface with perfluoroalkylsilane (FAS) molecules. Kelvin probe experiments revealed that the work function of the gold surface modified with FAS molecules increased by 0.55 eV as compared to the untreated gold. Hole injection into fullerenes is qualitatively understood in terms of this work-function change induced by the FAS molecules. The present results indicate that the charge injection from electrodes to organic semiconductors can be controlled simply by modification of semiconductor/metal interface without changing materials themselves. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
Complementary Index |
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