التفاصيل البيبلوغرافية
| العنوان: |
Pseudomorphic high electron mobility heterostructures with extremely high conductivity using Te as n-type dopant by low-pressure metal organic chemical vapor deposition. |
| المؤلفون: |
Blumina, M., Lelong, I.O., Sarfaty, R., Fekete, D. |
| المصدر: |
Journal of Applied Physics; 1/1/1994, Vol. 75 Issue 1, p357, 5p |
| مصطلحات موضوعية: |
QUANTUM wells, HETEROSTRUCTURES, METAL organic chemical vapor deposition, PHOTOLUMINESCENCE, SPECTRUM analysis |
| مستخلص: |
Modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs single-quantum-well structures have been grown by low-pressure metal organic vapor phase epitaxy and characterized by Hall, C-V measurements, and photoluminescence spectroscopy. The use of tellurium instead of silicon as an n-type dopant for AlxGa1-xAs increases the electron concentration without decreasing the electron mobility. High free-electron concentrations of ns=7.5×1012 cm-2 (300 K) and ns=3.7×1012 cm-2 (77 K), and Hall mobilities of μ=5470 cm2 (V s)-1 (300 K) and μ=24 600 cm2 (V s)-1 (77 K) were obtained. The high concentration and mobility product of the channel: nsμ=4.1×1016 (V s)-1 at 300 K and nsμ=9.1×1016 (V s)-1 at 77 K, makes it a preferred choice for high-speed applications. [ABSTRACT FROM AUTHOR] |
|
Copyright of Journal of Applied Physics is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) |
| قاعدة البيانات: |
Complementary Index |
Find this article in full text from Scitation.