التفاصيل البيبلوغرافية
| العنوان: |
Probing surface recombination velocities in semiconductors using two-photon microscopy. |
| المؤلفون: |
Gaury, Benoit, Haney, Paul M. |
| المصدر: |
Journal of Applied Physics; 3/28/2016, Vol. 119 Issue 12, p125105-1-125105-9, 9p, 3 Diagrams, 4 Graphs |
| مصطلحات موضوعية: |
SURFACE recombination, ELECTRON-hole recombination, SUPERCONDUCTIVITY, RECOMBINATION in semiconductors, ELECTRON recombination |
| مستخلص: |
The determination of minority-carrier lifetimes and surface recombination velocities is essential for the development of semiconductor technologies such as solar cells. The recent development of two-photon time-resolved microscopy allows for better measurements of bulk and subsurface interfaces properties. Here, we analyze the diffusion problem related to this optical technique. Our three-dimensional treatment enables us to separate lifetime (recombination) from transport effects (diffusion) in the photoluminescence intensity. It also allows us to consider surface recombination occurring at a variety of geometries: a single plane (representing an isolated exposed or buried interface), a two parallel planes (representing two inequivalent interfaces), and a spherical surface (representing the enclosing surface of a grain boundary). We provide fully analytical results and scalings directly amenable to data fitting and apply those to experimental data collected on heteroepitaxial CdTe/ZnTe/Si. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
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