التفاصيل البيبلوغرافية
| العنوان: |
Surface photovoltage studies of p-type AlGaN layers after reactive-ion etching. |
| المؤلفون: |
McNamara, J. D., Phumisithikul, K. L., Baski, A. A., Marini, J., Shahedipour-Sandvik, F., Das, S., Reshchikov, M. A. |
| المصدر: |
Journal of Applied Physics; 2016, Vol. 120 Issue 15, p1-6, 6p, 4 Graphs |
| مصطلحات موضوعية: |
ELECTRIC properties of aluminum gallium nitride, SURFACE photovoltage, MAGNESIUM films, P-type semiconductors, DOPED semiconductors, REACTIVE-ion etching, HOPPING conduction |
| مستخلص: |
The surface photovoltage (SPV) technique was used to study the surface and electrical properties of Mg-doped, p-type AlxGa1-xN (0.06
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| قاعدة البيانات: |
Complementary Index |
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