التفاصيل البيبلوغرافية
| العنوان: |
Influences of point defects on electrical and optical properties of InGaN light-emitting diodes at cryogenic temperature. |
| المؤلفون: |
Tu, Yi, Ruan, Yujiao, Zhu, Lihong, Tu, Qingzhen, Wang, Hongwei, Chen, Jie, Lu, Yijun, Gao, Yulin, Shih, Tien-Mo, Chen, Zhong, Lin, Yue |
| المصدر: |
Journal of Applied Physics; 2018, Vol. 123 Issue 16, pN.PAG-N.PAG, 8p, 1 Chart, 6 Graphs |
| مصطلحات موضوعية: |
POINT defects, ELECTRIC properties of indium gallium nitride, OPTICAL properties of indium gallium nitride, LIGHT emitting diode efficiency, QUANTUM efficiency, ELECTRIC resistance |
| مستخلص: |
We investigate the cryogenic external quantum efficiency (EQE) for some InGaN light-emitting diodes with different indium contents. We observe a monotonic decrease in EQE with the increasing forward current before the “U-turn” point, beyond which the thermal effect increases the EQE. We discover positive dependences among the droop rate (χ), differential electrical resistance (Rd), and indium content. Also, χ and Rd of individual green samples shift correspondingly during the aging test, when the Mg ions are activated at high injection density and diffuse into the active region. Considering the fact that both In and Mg ions would introduce point defects (PDs), we proposed a model that reveals the mechanism of interplay between PDs and carriers. PDs serve as both energy traps and non-radiative recombination centers. They attract and confine carriers, leading to an increase in Rd and a decrease in EQE. [ABSTRACT FROM AUTHOR] |
|
Copyright of Journal of Applied Physics is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) |
| قاعدة البيانات: |
Complementary Index |
Find this article in full text from Scitation.