دورية أكاديمية

Controlling the p-type conductivity of SnO by doping with nitrogen and hydrogen.

التفاصيل البيبلوغرافية
العنوان: Controlling the p-type conductivity of SnO by doping with nitrogen and hydrogen.
المؤلفون: Becker, M., Hamann, R., Hartung, D., Voget-Grote, C., Graubner, S., Hoffmann, P., Ronning, C., Polity, A., Klar, P. J.
المصدر: Journal of Applied Physics; 2019, Vol. 125 Issue 8, pN.PAG-N.PAG, 11p
مصطلحات موضوعية: TIN oxides, THIN films, ION beams, STOICHIOMETRY, SECONDARY ion mass spectrometry, ACTIVATION energy
مستخلص: Two series of SnO thin films, one doped with N and one doped with H, were deposited on c-plane sapphire by reactive ion beam sputter deposition starting from growth parameters optimized for stoichiometric SnO. The amounts of dopants incorporated into the SnO:H and SnO:N samples were quantified by secondary ion mass spectroscopy. The influence on the structural and electrical properties of SnO thin films was studied as a function of dopant concentration. In the case of N doping, all N incorporated, probably as N O , are active as the acceptor and exhibit long-term stability. We assign an acceptor activation energy of 100 to 150 meV to N O . However, we observe a change in the film morphology at a critical N concentration of about 7 ⋅ 10 17 cm − 3 , which deteriorates the structural properties of the films. In the case of SnO:H, the situation is different. We observe an outdiffusion of H after growth, i.e., the samples are not stable in the long term. Nevertheless, all H incorporated up to a H-content of 10 19 cm − 3 seem to be electrically active and exhibit an activation energy between 150 and 250 meV, likely corresponding to H i . Furthermore, at H contents above 10 19 cm − 3 , we observe molecular H 2 inside the SnO:H thin films. We conclude that N doping of SnO is better suited for tuning the p-type conductivity of SnO. However, it will be essential to overcome the morphology change observed at the critical N concentration to fully explore the tunability of the p-type conductivity in device applications. [ABSTRACT FROM AUTHOR]
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قاعدة البيانات: Complementary Index
الوصف
تدمد:00218979
DOI:10.1063/1.5052606