دورية أكاديمية
Compositional accuracy in atom probe tomography analyses performed on III-N light emitting diodes.
العنوان: | Compositional accuracy in atom probe tomography analyses performed on III-N light emitting diodes. |
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المؤلفون: | Di Russo, E., Cherkashin, N., Korytov, M., Nikolaev, A. E., Sakharov, A. V., Tsatsulnikov, A. F., Bonef, B., Blum, I., Houard, J., Da Costa, G., Blavette, D., Rigutti, L. |
المصدر: | Journal of Applied Physics; 9/28/2019, Vol. 126 Issue 12, pN.PAG-N.PAG, 9p, 7 Graphs |
مصطلحات موضوعية: | ATOM-probe tomography, LIGHT emitting diodes, INDIUM gallium nitride, ELECTRON holography, LASER pulses |
مستخلص: | Laser-assisted atom probe tomography (APT) and high-resolution dark-field electron holography (HR-DFEH) were performed to investigate the composition of a polar [0001] GaN/Al |
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قاعدة البيانات: | Complementary Index |
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