التفاصيل البيبلوغرافية
| العنوان: |
Microstructure evolution and passivation quality of hydrogenated amorphous silicon oxide (a-SiOx:H) on 〈100〉- and 〈111〉-orientated c-Si wafers. |
| المؤلفون: |
Jun-Fan Chen, Sheng-Sheng Zhao, Ling-Ling Yan, Hui-Zhi Ren, Can Han, De-Kun Zhang, Chang-Chun Wei, Guang-Cai Wang, Guo-Fu Hou, Ying Zhao, Xiao-Dan Zhang |
| المصدر: |
Chinese Physics B; Feb2020, Vol. 29 Issue 3, p1-1, 1p |
| مصطلحات موضوعية: |
HYDROGENATED amorphous silicon, SILICON oxide, PASSIVATION, SILICON solar cells, OPEN-circuit voltage |
| مستخلص: |
Hydrogenated amorphous silicon oxide (a-SiOx:H) is an attractive passivation material to suppress epitaxial growth and reduce the parasitic absorption loss in silicon heterojunction (SHJ) solar cells. In this paper, a-SiOx:H layers on different orientated c-Si substrates are fabricated. An optimal effective lifetime (τeff) of 4743 μs and corresponding implied open-circuit voltage (i Voc) of 724 mV are obtained on 〈100〉-orientated c-Si wafers. While τeff of 2429 μs and i Voc of 699 mV are achieved on 〈111〉-orientated substrate. The FTIR and XPS results indicate that the a-SiOx:H network consists of SiOx (Si-rich), Si– OH, Si– O– SiHx, SiO2≡Si– Si, and O3 ≡S– Si. A passivation evolution mechanism is proposed to explain the different passivation results on different c-Si wafers. By modulating the a-SiOx:H layer, the planar silicon heterojunction solar cell can achieve an efficiency of 18.15%. [ABSTRACT FROM AUTHOR] |
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