التفاصيل البيبلوغرافية
| العنوان: |
Preferential Placement of Aligned Nitrogen Vacancy Centers in Chemical Vapor Deposition Overgrown Diamond Microstructures. |
| المؤلفون: |
Götze, Arne, Striegler, Nico, Marshall, Alastair, Neumann, Philipp, Giese, Christian, Quellmalz, Patricia, Knittel, Peter |
| المصدر: |
Physica Status Solidi - Rapid Research Letters; Jan2022, Vol. 16 Issue 1, p1-6, 6p |
| مصطلحات موضوعية: |
CHEMICAL vapor deposition, DIAMOND crystals, ELECTRON paramagnetic resonance, EPITAXIAL layers, DIAMONDS, MAGNETIC resonance |
| مستخلص: |
The usefulness of nitrogen vacancy (NV) centers in diamond is augmented by a low defect and impurity density in the surrounding host material, and applications benefit from the ability to control the position of the NV centers. Herein, a process to create NV centers on single‐crystalline diamond microstructures by chemical vapor deposition (CVD) is presented. Pyramidal structures with {111} side facets are formed during the intrinsic overgrowth of dry chemically etched cylindrical pillars on a substrate with {100} surface orientation. A thin nitrogen‐doped epitaxial layer is deposited on top of the pyramids resulting in the creation of NV centers exclusively on the {111} pyramid side faces. Optically detected magnetic resonance (ODMR) and spin echo measurements reveal preferential alignment of the NV centers in a single {111} direction and a T2 time of 55 μs. The T2 time of the NV centers is limited by the surrounding substitutional nitrogen (P1 center) concentration of [P1] = 5 ppm. A low density of other paramagnetic spin noise is detected by double‐electron electron resonance (DEER) measurements. [ABSTRACT FROM AUTHOR] |
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