التفاصيل البيبلوغرافية
| العنوان: |
Chemical and electronic structure of the heavily intermixed (Cd,Zn)S:Ga/CuSbS2 interface. |
| المؤلفون: |
Hartmann, C., Brandt, R. E., Baranowski, L. L., Köhler, L., Handick, E., Félix, R., Wilks, R. G., Zakutayev, A., Buonassisi, T., Bär, M. |
| المصدر: |
Faraday Discussions; 2022, Issue 239, p130-145, 16p |
| مستخلص: |
The interface formation and chemical and electronic structure of the (Cd,Zn)S:Ga/CuSbS2 thin-film solar cell heterojunction were studied using hard X-ray photoelectron spectroscopy (HAXPES) of the bare absorber and a buffer/absorber sample set for which the buffer thickness was varied between 1 and 50 nm. We find a heavily intermixed interface, involving Cu, Zn, and Cd as well as significant Ga and Cu profiles in the buffer. The valence band (VB) offset at the buffer/absorber interface was derived as (−1.3 ± 0.1) eV, which must be considered an upper bound as the Cu diffused into the buffer might form a Cu-derived VB maximum located closer to the Fermi level. The estimated conduction band minimum was 'cliff'-like; a situation made more severe considering the Cu-deficiency found for the CuSbS2 surface. The complex interface structure's effect on the performance of (Cd,Zn)S:Ga/CuSbS2-based solar cells and its limitation is discussed together with possible mitigation strategies. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
Complementary Index |
