التفاصيل البيبلوغرافية
| العنوان: |
Polarization-field tuning and stable performance of the resistance switching in a ferroelectric/amorphous PbZr0.2Ti0.8O3/La2Zr2O7 heterostructure. |
| المؤلفون: |
Yuan, Y. S., Lv, Z. L., Cao, J. P., Meng, K. K., Zhao, G. L., Lin, K., Li, Q., Chen, X., Li, Q. H., Li, X. H., Cao, Y. L., Deng, J. X., Xing, X. R., Miao, Jun |
| المصدر: |
Journal of Materials Science: Materials in Electronics; Jun2023, Vol. 34 Issue 17, p1-9, 9p |
| مستخلص: |
PbZr0.2Ti0.8O3/La2Zr2O7 (PZT/LZO) bilayer and amorphous La2Zr2O7 thin films were fabricated using pulse laser deposition and radio frequency magnetron sputtering. A typical and robust bipolar resistive switching (RS) behavior was revealed in the PZT/LZO heterostructure at room temperature. Compared with LZO single film, the PZT/LZO heterostructure exhibits a better RS property with a one order magnitude higher HRS/LRS ratio. More interestingly, the RS of PZT/LZO structure exhibited a stable degradation RS performance until 103 cycles at room temperature. The conduction mechanism in PZT/LZO bilayer can be attributed to the space-limited-conduction (SCLC) and Schottky-barrier models, while LZO thin film was attributed to SCLC conduction. As a result, the PZT/LZO bilayer under polarization field tuning shows an effective way to improve the RS performance and provides a new route for RRAM applications. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
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