دورية أكاديمية
Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser.
| العنوان: | Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser. |
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| المؤلفون: | He, Tianjiang, Liu, Suping, Li, Wei, Zhong, Li, Ma, Xiaoyu, Xiong, Cong, Lin, Nan, Wang, Zhennuo |
| المصدر: | Journal of Semiconductors; Oct2023, Vol. 44 Issue 10, p1-7, 7p |
| قاعدة البيانات: | Complementary Index |
| تدمد: | 16744926 |
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| DOI: | 10.1088/1674-4926/44/10/102302 |