التفاصيل البيبلوغرافية
| العنوان: |
Raman-based mapping and depth-profiling of the relaxation state in amorphous silicon. |
| المؤلفون: |
Lussier, A. W., Bourbonnais-Sureault, D., Chicoine, M., Martel, R., Martinu, L., Roorda, S., Schiettekatte, F. |
| المصدر: |
Journal of Applied Physics; 2/14/2024, Vol. 135 Issue 6, p1-11, 11p |
| مصطلحات موضوعية: |
AMORPHOUS silicon, DEPTH profiling |
| مستخلص: |
We show that the micro-scale variations in the relaxation state of amorphous silicon (a-Si) can be well-identified by Raman mapping over hundreds or thousands of μm2 in 1–2 h. Pure and relaxed a-Si is obtained by self-implantation in crystalline silicon (c-Si) followed by anneal at 500 °C. It is then locally re-implanted over micro-sized patterns to produce unrelaxed a-Si zones. Raman mappings are obtained by pointwise confocal μ-Raman and hyperspectral Raman imaging. We also measure the depth profiles of the relaxation state in re-implanted a-Si by scanning the edge of a re-implanted sample. We infer from the depth profiles that the minimal damage dose to fully de-relax a-Si is 0.04 displacements per atoms, which is an order of magnitude smaller than the fluence needed to fully amorphize c-Si. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
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