دورية أكاديمية
Observation of Positive Trap Charge by Electron Holography in PMOS Device.
| العنوان: | Observation of Positive Trap Charge by Electron Holography in PMOS Device. |
|---|---|
| المؤلفون: | Wang, Yun-Yu, Sankaranarayanan, Sandeep, Kaushik, Naveen, Wang, Zhouguang, Smith, Mike, Jin, Qiang, Rossi, Tommaso |
| المصدر: | Microscopy Today; May2024, Vol. 32 Issue 3, p16-21, 6p |
| مصطلحات موضوعية: | ELECTRON holography, ELECTRON traps, METAL oxide semiconductors, FOCUSED ion beams |
| مستخلص: | It has been hypothesized that trap charge plays an important role in PMOS (positive-channel metal oxide semiconductor) device reliability. By using electron holography, trap charge in a spacer oxide was observed to cause an inversion of junction in an un-stressed PMOS device prepared using a Ga+ focused ion beam (FIB). Through 400°C annealing for 10 min in vacuum, trap charge in the spacer oxide dispersed and the junction recovered. Technology computer-aided design (TCAD) simulation was used to confirm the positive trap charge effect on the junction. Furthermore, the simulation showed that a low concentration of positive trap charge at the Si/SiO |
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| قاعدة البيانات: | Complementary Index |
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