دورية أكاديمية
Low-resistivity molybdenum-carbide thin films formed by thermal atomic layer deposition with pressure-assisted decomposition reaction.
العنوان: | Low-resistivity molybdenum-carbide thin films formed by thermal atomic layer deposition with pressure-assisted decomposition reaction. |
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المؤلفون: | Ha, Min-Ji, Kang, Na-Gyeong, Kim, Woo-Hee, Park, Tae Joo, Park, Tae-Eon, Ahn, Ji-Hoon |
المصدر: | Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; Jul2024, Vol. 42 Issue 4, p1-7, 7p |
مصطلحات موضوعية: | ATOMIC layer deposition, THIN films, CHEMICAL decomposition, METALLIC films, SEMICONDUCTOR devices, PRESSURE |
مستخلص: | The rapid increase in the resistivity of thin metal films as their thickness decreases to sub-10 nm, known as the resistivity size effect, is an important issue that must be addressed to ensure device performance in ultraminiaturized semiconductor devices. Molybdenum carbide (MoC |
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قاعدة البيانات: | Complementary Index |
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