دورية أكاديمية
New Observation of Mobility and Reliability Dependence on Mechanical Film Stress in Strained Silicon CMOSFETs.
العنوان: | New Observation of Mobility and Reliability Dependence on Mechanical Film Stress in Strained Silicon CMOSFETs. |
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المؤلفون: | In-Shik Han, Hee-Hwan Ji, Ook-Sang You, Won-Ho Choi, Jung-Eun Lim, Kyong-Jin Hwang, Sung-Hyung Park, Heui-Seung Lee, Dae-Byung Kim, Hi-Deok Lee |
المصدر: | IEEE Transactions on Electron Devices; Jun2008, Vol. 55 Issue 6, p1352-1358, 7p |
مصطلحات موضوعية: | HOT carriers, PLASMA-enhanced chemical vapor deposition, MATERIALS compression testing, SILICON, METAL oxide semiconductor field-effect transistors, THIN films, STRAINS & stresses (Mechanics) |
مستخلص: | This paper shows that dc device performance and reliability characteristics of CMOSFETs do not have the same dependence on the film stress of contact etch stopping layers (CESLs) in strained silicon technology. Two kinds of CESLs, namely, plasma-enhanced chemical vapor deposition (PE-CVD) SiN and low-pressure CVD SiON, with tensile and compressive stresses, respectively, were used to induce channel stress. To further analyze the effects of stress, the film stress of PE-CVD SiN was intentionally split into compressive stress and tensile stress. It is shown that the initial D |
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قاعدة البيانات: | Complementary Index |
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