التفاصيل البيبلوغرافية
| العنوان: |
Electronic properties of a one-dimensional channel field effect transistor formed by molecular.... |
| المؤلفون: |
Burroughes, J.H., Leadbeater, M.L. |
| المصدر: |
Applied Physics Letters; 10/18/1993, Vol. 63 Issue 16, p2219, 3p, 1 Diagram, 3 Graphs |
| مصطلحات موضوعية: |
FIELD-effect transistors, ELECTRON gas, MOLECULAR beam epitaxy |
| مستخلص: |
Demonstrates channel field effect transistor using p-n layered backgate for electron gas control. Growth of electron gas by molecular beam epitaxy; Modulation of electron gas for narrow conduction channel formation; Association between transconductance and electron mobility. |
| قاعدة البيانات: |
Complementary Index |
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