دورية أكاديمية
Electronic properties of a one-dimensional channel field effect transistor formed by molecular....
العنوان: | Electronic properties of a one-dimensional channel field effect transistor formed by molecular.... |
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المؤلفون: | Burroughes, J.H., Leadbeater, M.L. |
المصدر: | Applied Physics Letters; 10/18/1993, Vol. 63 Issue 16, p2219, 3p, 1 Diagram, 3 Graphs |
مصطلحات موضوعية: | FIELD-effect transistors, ELECTRON gas, MOLECULAR beam epitaxy |
مستخلص: | Demonstrates channel field effect transistor using p-n layered backgate for electron gas control. Growth of electron gas by molecular beam epitaxy; Modulation of electron gas for narrow conduction channel formation; Association between transconductance and electron mobility. |
قاعدة البيانات: | Complementary Index |
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