Diffusion of beryllium in Ge and Si–Ge alloys.

التفاصيل البيبلوغرافية
العنوان:	Diffusion of beryllium in Ge and Si–Ge alloys.
المؤلفون:	Koskelo, O., Pusa, P., Räisänen, J., Köster, U., Riihimäki, I.
المصدر:	Journal of Applied Physics; Apr2008, Vol. 103 Issue 7, p073513, 4p
مستخلص:	Diffusion of implanted ⁷Be in Si1-xGex (x=0.20,0.65,1.00) systems has been studied under intrinsic conditions in the temperature range of 460–720 °C by the modified radiotracer technique. Arrhenius-type behavior with activation enthalpies of 2.0 eV for Ge and 2.5 eV for the Si–Ge alloys was noted. Unexpectedly, the diffusivity of beryllium is higher in the Si0.80Ge0.20 material than in Si0.35Ge0.65 which is discussed in terms of possible prevailing diffusion mechanisms. It is proposed that Be diffusion in Si1-xGex systems is dissociative mechanism dominated for germanium rich materials and the kick-out (or interstitialcy) mechanism dominates in silicon rich materials. [ABSTRACT FROM AUTHOR]
	Copyright of Journal of Applied Physics is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
قاعدة البيانات:	Complementary Index

Find this article in full text from Scitation.

كن أول من يترك تعليقا!