دورية أكاديمية

The synthesis mechanism of complex oxide films formed in dense RF — plasma by reactive sputtering of stoichiometric targets.

التفاصيل البيبلوغرافية
العنوان: The synthesis mechanism of complex oxide films formed in dense RF — plasma by reactive sputtering of stoichiometric targets.
المؤلفون: Mukhortov, V. M., Golovko, Y. I., Tolmachev, G. N., Klevtzov, A. N.
المصدر: Ferroelectrics; Aug2000, Vol. 247 Issue 1, p75-83, 9p
قاعدة البيانات: Complementary Index
الوصف
تدمد:00150193
DOI:10.1080/00150190008214943