التفاصيل البيبلوغرافية
| العنوان: |
Bismuth-doped tin telluride. |
| المؤلفون: |
Tamor, M. A., Holloway, H., Ager, R. M., Gierczak, C. A., Carter, R. O. |
| المصدر: |
Journal of Applied Physics; 2/1/1987, Vol. 61 Issue 3, p1094, 5p |
| مصطلحات موضوعية: |
TELLURIDES, TIN compounds, BISMUTH, DOPED semiconductors |
| مستخلص: |
Describes epitaxial layers of tin telluride produced by optimizing the growth conditions and doping with bismuth. Dependence of the hole mobility on bismuth content; Measurements of the refractive index of low carrier concentration tin telluride; Information on the infrared optical properties of tin telluride. |
| قاعدة البيانات: |
Complementary Index |
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