مؤتمر
The electrical characteristics analysis of SiOxNy ARC for sub-0.17· ·Gigabit DRAM.
العنوان: | The electrical characteristics analysis of SiOxNy ARC for sub-0.17· ·Gigabit DRAM. |
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المؤلفون: | Chi-Hoon Lee, Nak-Jin Son, Sun-Cheol Hong, Seung-Moo Lee, Dong-Gun Park, Won-Hee Jang, Tae-Hyun An, Wonshik Lee |
المصدر: | 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497); 2001, p38-41, 4p |
قاعدة البيانات: | Complementary Index |
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