مؤتمر
The effect of mechanical stress from stopping nitride to the reliability of tunnel oxide and data retention characteristics of NAND FLASH memory.
| العنوان: | The effect of mechanical stress from stopping nitride to the reliability of tunnel oxide and data retention characteristics of NAND FLASH memory. |
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| المؤلفون: | Om, J., Eunseok Choi, Sejun Kim, Heegee Lee, Yongwook Kim, Heenyun Chang, Sungki Park, Gihyun Bae |
| المصدر: | 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings 43rd Annual; 2005, p257-259, 3p |
| قاعدة البيانات: | Complementary Index |
Full Text Finder | ردمك: | 9780780388031 |
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| DOI: | 10.1109/RELPHY.2005.1493094 |